Electron-paramagnetic-resonance study of Se-doped AlSb: Evidence for negative U of the DX center.
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Biomedical subjects
J Lagowski
Publications and source records attributed to J Lagowski.
Raman scattering from the intrinsic 68-meV acceptor in Ga-rich GaAs.
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Unification of the properties of the EL2 defect in GaAs.
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Comment on "Identification of a defect in a semiconductor: EL2 in GaAs"
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Absorption spectra of Ti-doped GaAs.
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Metastability of the midgap level EL2 in GaAs: Relationship with the As antisite defect.
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Response to "Comment on 'Electron mobility in modulation-doped heterostructures' "
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Erratum: Electron mobility in modulation-doped heterostructures
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