Biomedical subjects

J M Boudry

Publications and source records attributed to J M Boudry.

3 recordsLinked to original sources

PubMed1997

Empirical and theoretical investigation of the noise performance of indirect detection, active matrix flat-panel imagers (AMFPIs) for diagnostic radiology.

Noise properties of active matrix, flat-panel imagers under conditions relevant to diagnostic radiology are investigated. These studies focus on imagers based upon arrays with pixels incorporating a discrete photodiode coupled to a thin-film transistor, both fabricated from hydrogenated amorphous silicon. These optically sensitive arrays are operated with an overlying x-ray converter to allow indirect detection of incident x rays. External electronics, including gate driver circuits and preamplification circuits, are also required to operate the arrays. A theoretical model describing the signal and noise transfer properties of the imagers under conditions relevant to diagnostic radiography, fluoroscopy, and mammography is developed. This frequency-dependent model is based upon a cascaded systems analysis wherein the imager is conceptually divided into a series of stages having intrinsic gain and spreading properties. Predictions from the model are compared with x-ray sensitivity and noise measurements obtained from individual pixels from an imager with a pixel format of 1536 x 1920 pixels at a pixel pitch of 127 microns. The model is shown to be in excellent agreement with measurements obtained with diagnostic x rays using various phosphor screens. The model is used to explore the potential performance of existing and hypothetical imagers for application in radiography, fluoroscopy, and mammography as a function of exposure, additive noise, and fill factor. These theoretical predictions suggest that imagers of this general design incorporating a CsI: Tl intensifying screen can be optimized to provide detective quantum efficiency (DQE) superior to existing screen-film and storage phosphor systems for general radiography and mammography. For fluoroscopy, the model predicts that with further optimization of a-Si:H imagers, DQE performance approaching that of the best x-ray image intensifier systems may be possible. The results of this analysis suggest strategies for future improvements of this imaging technology.

Electronics↗

PubMed1996

Radiation damage of amorphous silicon, thin-film, field-effect transistors.

The effect of 60Co radiation on the noise and drain-source current characteristics of hydrogenated amorphous silicon (alpha-Si:H) field-effect transistors (FETs) was examined as a function of dose to cumulative doses as high as approximately 2 x 10(4) Gy. Following these measurements, room-temperature and elevated-temperature annealing of induced radiation damage was examined. The FETs examined are representative of those incorporated in alpha-Si:H arrays under development for various x-ray medical imaging applications. No significant effect upon the noise characteristics of the FETs was observed as a result of the radiation. The predominant drain-source current effect with increasing dose was a shift of the transfer characteristic toward negative gate voltage and/or a decrease of the transfer characteristic subthreshold slope. This resulted in large increases in leakage current for gate voltages where the FETs were initially highly nonconducting. This leakage current increase was less pronounced for more negative gate voltages and was further diminished by maintaining the FETs at a more negative gate voltage during the irradiation. Following the radiation measurements, room-temperature annealing resulted in a 10% to 50% reduction in the leakage current in the first day followed by a logarithmic decrease thereafter. Elevated-temperature annealing for 2 h at 200 degrees C restored FET leakage current and threshold voltage properties to their preirradiation values. The irradiation effects are small for cumulative doses less than approximately 100 Gy, which is larger than the clinical lifetime dose for an imaging detector for chest radiography or for fluoroscopy (with infrequent exposure to the direct beam). For significantly higher dose applications such as mammography, fluoroscopy (with frequent direct beam exposure), and radiotherapy imaging, the results suggest that periodic elevated-temperature annealing or operation of the arrays at more negative gate voltages may be necessary.

Cobalt Radioisotopes↗

PubMed1995

A real-time, flat-panel, amorphous silicon, digital x-ray imager.

As part of the development necessary for implementing a fully digital radiology department, the authors have investigated thin-film photodiodes and transistors for use in new photoelectronic imaging devices. One such device, a large-area, flat-panel, amorphous silicon imaging array, has been developed and is currently being tested. The array has a format of 512 x 560 pixels, a pixel-to-pixel pitch of 450 microns, and an area of 230 x 252 mm2, making it the largest self-scanning, solid-state imaging array developed to date. The array is used in conjunction with an overlying x-ray converter. Although specifically designed for megavoltage imaging, the device can produce high-quality, low spatial resolution, diagnostic x-ray images. Qualitative comparisons of array images of anthropomorphic head, chest, and pelvic phantoms and a spatial resolution pattern suggest that much of the information content of the film images at low spatial resolution is present in the corresponding array images. Current trends in the development of large-area, flat-panel imaging technology hold the promise of higher resolution arrays in the near future.

Humans↗