Electron-acoustic and surface electron beam induced voltage signal formation in scanning electron microscopy analysis of semiconducting samples.
The conditions for the detection of electron-acoustic (EA) and surface electron beam induced voltage (SEBIV) signals using a common sample mount and bottomside detection scheme are hereby discussed. It is shown that while the intrinsic properties of the sample under electron-beam irradiation would chiefly determine the presence of these contrast mechanisms, the manner in which the sample is mechanically and electrically configured in relation to the signal detection is crucial in determining the actual signal coupling mechanisms at work and hence the assumptions by which a robust and consistent interpretation of experimental results can be made. EA signals are detectable only if electrical coupling between the sample and the detector is defeated, a necessary pre-requisite as the signal magnitude of carrier-generated SEBIV coupling is 2-3 orders larger in most cases. With regards to SEBIV detection, bottomside SEBIV detection may be preferable to topside detection owing to minimization of topographic signal contribution, higher signal coupling efficiency and a less complex sample-detector mounting procedure.