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J Zegenhagen

Publications and source records attributed to J Zegenhagen.

At least 19 recordsLinked to original sources

Initial corrosion observed on the atomic scale.

Corrosion destroys more than three per cent of the world's GDP. Recently, the electrochemical decomposition of metal alloys has been more productively harnessed to produce porous materials with diverse technological potential. High-resolution insight into structure formation during electrocorrosion is a prerequisite for an atomistic understanding and control of such electrochemical surface processes. Here we report atomic-scale observations of the initial stages of corrosion of a Cu3Au111 single crystal alloy within a sulphuric acid solution. We monitor, by in situ X-ray diffraction with picometre-scale resolution, the structure and chemical composition of the electrolyte/alloy interface as the material decomposes. We reveal the microscopic structural changes associated with a general passivation phenomenon of which the origin has been hitherto unclear. We observe the formation of a gold-enriched single-crystal layer that is two to three monolayers thick, and has an unexpected inverted (CBA-) stacking sequence. At higher potentials, we find that this protective passivation layer dewets and pure gold islands are formed; such structures form the templates for the growth of nanoporous metals. Our experiments are carried out on a model single-crystal system. However, the insights should equally apply within a crystalline grain of an associated polycrystalline electrode fabricated from many other alloys exhibiting a large difference in the standard potential of their constituents, such as stainless steel (see ref. 5 for example) or alloys used for marine applications, such as CuZn or CuAl.

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Following adsorption kinetics at electrolyte/metal interfaces through crystal truncation scattering: sulfur on Au(111).

Combining electrochemical methods, in situ scanning tunneling microscopy, and surface x-ray diffraction allowed study of the structure and kinetics of S/Au(111) electrodes in aqueous electrolytes under potential control. Integrated intensities of a particular crystal truncation rod at anti-Bragg conditions were used to trace the sulfur adsorption and desorption as a function of electrode potential in real time. The S desorption is a first order process and the adsorption follows a Langmuir isotherm. A weakly bound S layer is found on the surface before charge transfer, and then specific adsorption occurs.

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Anomalous isotopic effect on the lattice parameter of silicon.

The difference Delta(a)=a(30)-a(28) of the lattice parameter of 30Si and 28Si crystals is measured over a temperature range from 4.7 to 700 K. In disagreement with existing knowledge, the strongest isotopic effect is not detected at the lowest achieved temperature T=4.7 K. An anomalous behavior is observed: The relative difference |Delta(a)/a| attains its maximum value of 56.8(5) ppm at T=75(10) K. The anomalous behavior is attributed to the influence of phonon modes with negative Grüneisen parameters. At T=700 K the effect still amounts to 30% of the maximal value. The experimental data are consistent with an approach based on the density-functional perturbation theory.

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X-ray standing wave analysis of the effect of isotopic composition on the lattice constants of Si and Ge.

The x-ray standing wave (XSW) technique is used to measure the isotopic mass dependence of the lattice constants of Si and Ge. Backreflection allows substrates of moderate crystallinity to be used while high order reflection yields high accuracy. The XSW, generated by the substrate, serves as a reference for the lattice planes of an epilayer of different isotopic composition. Employing XSW and photoemission, the position of the surface planes is determined from which the lattice constant difference Deltaa is calculated. Scaled to DeltaM = 1 amu we find (Deltaa/a) of -0.36x10(-5) and -0.88x10(-5) for Ge and -1.8x10(-5) and -3.0x10(-5) for Si at 300 and 30 K, respectively.

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Subsurface dimerization in III-V semiconductor (001) surfaces.

We present the atomic structure of the c(8 x 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group III atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 x 2) reconstructions of III-V semiconductors can be described in a unified model.

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Isotopic mass and lattice constant: X-ray standing wave measurements

The molecular volume of crystals depends on their isotopic masses. This influence originates from the zero-point motion and the resulting small differences in lattice constants. This effect was measured with high precision by using an x-ray standing wave. The standing wave is generated during Bragg reflection and thus is in phase with the planes of the substrate crystal, which is covered with a homoepitaxial film that has a different isotopic composition than the substrate. The positions of the surface planes of the film with respect to the substrate planes are revealed by the photoelectrons excited by the maxima of the standing wave. For germanium-76 on natural germanium(111), a difference in lattice constant of -1.1 x 10(-5) and -2.5 x 10(-5) at 300 and 54 kelvin, respectively, was found. The results are in good agreement with theoretical predictions.

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