Optical observation of impurity localized states at the edges of Landau subbands in doped quantum wells.
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Biomedical subjects
JA Kash
Publications and source records attributed to JA Kash.
Influence of the carrier distribution on carrier-carrier scattering in GaAs.
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Dynamics and spin relaxation of excitons in GaAs/AlxGa1-xAs quantum wells.
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Carrier-carrier scattering: An experimental comparison of bulk GaAs and GaAs/AlxGa1-xAs quantum wells.
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Comment on "Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors"
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Hot-electron luminescence: A comparison of GaAs and InP.
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Anisotropic valence bands in quantum wells: Quantitative comparison of theory and experiment.
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Relaxation of excitons in thin quantum wells.
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Measurement of the hole dispersion in a quantum well by hot-electron-acceptor luminescence.
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Fermi-Dirac distribution of excitons in coupled quantum wells.
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Electric-field effects on exciton lifetimes in symmetric coupled GaAs/Al0.3Ga0.7As double quantum wells.
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Long mean free path of hot electrons selectively injected to higher subbands.
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Kash, Tsang, and Ulbrich reply.
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Carrier-carrier scattering in GaAs: Quantitative measurements from hot (e,A0) luminescence.
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Hot-electron recombination at neutral acceptors in GaAs: A cw probe of femtosecond intervalley scattering.
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Localization and wave-vector conservation for optical phonons in AlxGa1-xAs and thin layers of GaAs.
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Kash, Jha, and Tsang reply.
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