Charge of the DX ground state in Ga1-xAlxAs.
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Biomedical subjects
JC Bourgoin
Publications and source records attributed to JC Bourgoin.
Electron emission from defects in multiband semiconductors.
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Relationship between donor defects and band structure in III-V alloys.
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Carrier capture on defects in multiband semiconductors.
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Nature of the DX center in Ga1-xAlxAs.
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Hole-capture cross section of DX centers in Ga1-xAlxAs.
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Excited states of DX in Ga1-xAlxAs.
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Observation of an additional electronic level of the EL2 defect.
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Carrier hopping capture in semiconductors.
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Energy level associated with the DX center in Ga1-xAlxAs.
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Behavior of electron-irradiation-induced defects in GaAs.
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Donors in semiconductors and metastability.
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DX center in Ga1-xAlxAs alloys.
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Electron-paramagnetic-resonance study of the Sn DX center in direct-gap Ga0.69Al0.31As.
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Auger regeneration of the EL2 defect induced by the Debye tail in the space-charge region of a junction: Application to the so-called "optical regeneration"
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Point defects in GaAs-Ga1-xAlxAs superlattices.
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Comment on "Atomic model for the EL2 defect in GaAs"
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Spatial and energetic distribution of Si-SiO2 near-interface states.
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