Mercury-related luminescent center in silicon.
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Biomedical subjects
JW Corbett
Publications and source records attributed to JW Corbett.
Multiple trapping of hydrogen at boron and phosphorus in silicon.
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Theoretical studies on the core structure of the 450 degreesC oxygen thermal donors in silicon.
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Effects of hydrogen on the barrier height of a titanium Schottky diode on p-type silicon.
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Charge state of hydrogen in crystalline silicon.
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Silicon-interstitial-oxygen-interstitial complex as a model of the 450 degrees C oxygen thermal donor in silicon.
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Divacancy acceptor levels in ion-irradiated silicon.
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Exponential diffusion profile for impurity trapping at an unsaturable trap.
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Photoluminescence study of radiative channels in ion-implanted silicon.
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Hydrogen passivation of a substitutional sulfur defect in silicon.
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Defect centers and changes in the electrical characteristics of Al/n-type Si Schottky diodes induced by hydrogen-ion implantations.
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State and motion of hydrogen in crystalline silicon.
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Evaluation of semiempirical quantum-chemical methods in solid-state applications. I. Molecular-cluster calculations of defects in silicon.
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