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James B Hannon

Publications and source records attributed to James B Hannon.

4 recordsLinked to original sources

Quantifying electrochemical nucleation and growth of nanoscale clusters using real-time kinetic data.

Electrochemical techniques are used widely for the fabrication of nanostructured materials, yet a quantitative understanding of nucleation and growth remains elusive. Here we probe electrochemical nucleation and growth of individual nanoclusters in real time by combining current-time measurements with simultaneous video imaging. We show discrepancies between the growth kinetics measured for individual nanoclusters and the predictions of models, and we describe a significant revision to conventional models that can explain the results. This improved understanding of nucleation and growth allows a more quantitative approach to the electrochemical fabrication of nanoscale structures.

Adsorption↗

Field-effect transistors assembled from functionalized carbon nanotubes.

We have fabricated field-effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing a hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices thus fabricated show excellent electrical characteristics.

Electrochemistry↗

Control of Si nanowire growth by oxygen.

Semiconductor nanowires formed using the vapor-liquid-solid mechanism are routinely grown in many laboratories, but a comprehensive understanding of the key factors affecting wire growth is still lacking. In this paper we show that, under conditions of low disilane pressure and higher temperature, long, untapered Si wires cannot be grown, using Au catalyst, without the presence of oxygen. Exposure to oxygen, even at low levels, reduces the diffusion of Au away from the catalyst droplets. This allows the droplet volumes to remain constant for longer times and therefore permits the growth of untapered wires. This effect is observed for both gas-phase and surface-bound oxygen, so the source of oxygen is unimportant. The control of oxygen exposure during growth provides a new tool for the fabrication of long, uniform-diameter structures, as required for many applications of nanowires.

Crystallization↗

Tungsten oxide nanowire growth by chemically induced strain.

We have investigated the formation of tungsten oxide nanowires under different chemical vapor deposition (CVD) conditions. We find that exposure of oxidized tungsten films to hydrogen and methane at 900 degrees C leads to the formation of a dense array of typically 10 nm diameter nanowires. Structural and chemical analysis shows that the wires are crystalline WO3. We propose a chemically driven whisker growth mechanism in which interfacial strain associated with the formation of tungsten carbide stimulates nanowire growth. This might be a general concept, applicable also to other nanowire systems.

Journal Article↗