Biomedical subjects

Jun Yamasaki

Publications and source records attributed to Jun Yamasaki.

7 recordsLinked to original sources

PubMed2006

Direct observation of six-membered rings in the upper and lower walls of a single-wall carbon nanotube by spherical aberration-corrected HRTEM.

Atomic arrangements of the continuous network of six-membered rings in a single graphene sheet constituting a single-wall carbon nanotube was imaged successfully by employing a spherical aberration-corrected HRTEM operated at 120 kV acceleration voltage. Utilizing two advantages of the aberration-corrected HRTEM, the images separately resolved the rings in the upper and lower walls. Such images can be considered to be the first "tomographic" atomic images taken by HRTEM. This is a striking result that changes the conventional concept of HRTEM as a projection image.

Computer Simulation↗

PubMed2005

A simple method for minimizing non-linear image contrast in spherical aberration-corrected HRTEM.

A simple and practical method for minimizing non-linear image contrast in spherical aberration-corrected (C(S)-corrected) high-resolution transmission electron microscopy is presented. The effectiveness of the method is considered from the viewpoints of theoretical formulations and image simulations including second-order imaging effects. The method is one of the advantages of C(S)-correction and applied to high-resolution images down to 0.1 nm. The dynamical diffraction effect is carefully evaluated, which shows that the phase deviation of diffracted waves from pi/2 violates the present method in thicker crystals over approximately 10 nm.

Journal Article↗

PubMed2005

First experiments of selected area nano-diffraction from semiconductor interfaces using a spherical aberration corrected TEM.

Selected area diffraction (SAD) from localized areas that are approximately 20 nm in diameter has been demonstrated for the first time using a spherical-aberration-corrected transmission electron microscope (Cs-corrected TEM). We have succeeded in obtaining sharp diffraction patterns from well-defined areas on both sides of the interface between a Ti-Si-Ge alloy and Si0.54Ge0.46. The errors in the area selection by an SAD aperture are reduced to <2 nm by the Cs-correction. The applications of this technique in studies of nanometer-sized materials are discussed.

Letter↗

PubMed2004

Linear and nonlinear optical properties of Ag-As-Se chalcogenide glasses for all-optical switching.

We prepared Ag(x)(As0.4Se0.6)(100-x) chalcogenide glasses by a melt-quenching method and measured their linear and nonlinear optical properties to evaluate their potential applications to all-optical ultrafast switching devices. Their nonlinear refraction and absorption were measured by the Z-scan method at 1.05 microm. The addition of Ag to As2Se3 glass led to an increase in the nonlinear refractive index without introducing an increase in the nonlinear absorption coefficient. The glass with a Ag content of x = 20 at. % revealed high nonlinearity ranging from 2000 to 27,000 times that of fused silica, depending on the incident optical intensity.

Journal Article↗

PubMed2004

First observation of In(x)Ga(1-x)As quantum dots in GaP by spherical-aberration-corrected HRTEM in comparison with ADF-STEM and conventional HRTEM.

In(x)Ga(1-x)As quantum dots in GaP(100) crystals prepared by the OMVPE technique are observed along the [011] direction with a newly developed 200-kV spherical aberration(Cs)-corrected HRTEM, a 200-kV annular dark-field (ADF)-STEM, and a 200-kV conventional HRTEM equipped with a thermal field-emission gun. The dots are 6-10 nm in size and strongly strained due to the misfit of about 9% with the GaP substrate and GaP cap layer. All of the cross-sectional high-resolution electron micrographs show dumbbell images of Ga and P atomic columns separated by 0.136 nm in well-oriented and perfect GaP areas, but the interpretable images are limited to those taken with the Cs-corrected HRTEM and ADF-STEM with Fourier filtering of the images. The Cs-corrected HRTEM and ADF-STEM are comparable from the viewpoint of interpretable resolution. A detailed comparison between the Cs-corrected HRTEM images and the simulated ones with electron incidence tilted by 1 degree to 5 degrees from the [011] zone axis gives information on local lattice bending in the dots from the images around 0.1 nm resolution. This becomes one of the useful techniques newly available from electron microscopy with sub-angstrom resolution.

Arsenates↗

PubMed2004

Direct observation of a stacking fault in Si(1 - x)Ge(x) semiconductors by spherical aberration-corrected TEM and conventional ADF-STEM.

Spherical aberration (C(S))-corrected transmission electron microscopy (TEM) and annular dark-field scanning TEM (ADF-STEM) are applied to high-resolution observation of stacking faults in Si(1 - x)Ge(x) alloy films prepared on a Si(100) buffer layer by the chemical vapor deposition method. Both of the images clarify the individual nature of stacking faults from their directly interpretable image contrast and also by using image simulation in the case of the C(S)-corrected TEM. Positions of the atomic columns obtained in the ADF-STEM images almost agree with a projection of the theoretical model studied by Chou et al. (Phys. Rev. B 32(1985): 7979). Comparison between the C(S)-corrected TEM and ADF-STEM images shows that their resolution is at a similar level, but directly interpretable image contrast is obtained in ultrathin samples for C(S)-corrected TEM and in slightly thicker samples for ADF-STEM.

Journal Article↗

PubMed2003

First observation of SiO2/Si(100) interfaces by spherical aberration-corrected high-resolution transmission electron microscopy.

SiO2/Si(100) interfaces were for the first time observed by a spherical aberration-corrected high-resolution transmission electron microscope in a cross-sectional mode. As the Fresnel fringes were not contrasted at the interfaces, the interfacial structures were clearly observed without the need for artificial image contrast. Atomic steps and defects on the Si(100) surfaces were accurately identified. Also, image simulations with the target imaging performance revealed oxygen atomic columns between silicon-silicon bonds. The present instrument is of potential use for semiconductor science and technology, even for the analysis of oxygen atoms at interfaces.

Journal Article↗