Two-dimensional, electrostatic finite element study of tip-substrate interactions in electric force microscopy of high density interconnect structures.
Two-dimensional electrostatic finite element modeling is used to estimate the variation of tip force as a function of potential, dielectric film thickness, and tip-substrate spacing when imaging using electric force microscopy. Blanket dielectric films and approximately 1000 nm thick interconnect structures were studied. We conclude that sidewall damage regions can be detected but will require special processing to make an unambiguous measurement.