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K Eberl

Publications and source records attributed to K Eberl.

At least 19 recordsLinked to original sources

Coherent coupling of two quantum dots embedded in an Aharonov-Bohm interferometer.

We define two laterally gated small quantum dots with less than 15 electrons in an Aharonov-Bohm geometry in which the coupling between the two dots can be changed. We measure Aharonov-Bohm oscillations for weakly coupled quantum dots. In an intermediate coupling regime we study molecular states of the double dot and extract the magnetic field dependence of the coherently coupled states.

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Modification of the intersubband excitation spectrum in a two-dimensional electron system under a perpendicular magnetic field.

Under an external magnetic field, new branches of spin- and charge-density waves have been studied in a quasi-two-dimensional electron system whose ground state has more than one Landau level occupied by electrons. These collective excitations can be treated as manifestations of the multicomponent nature of the electron system in magnetic field, whereas the occupied Landau levels should be associated with degrees of freedom.

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Optical investigation of spin-wave excitations in fractional quantum hall states and of interaction between composite fermions

We demonstrate that the temperature dependence of the electron spin polarization for the fractional states nu = 1/3 and nu = 2/3 displays activated behavior. This study enables the first measurement of the fractional quantum Hall spin-flip gaps. They are found to be systematically larger in comparison with the gaps simultaneously measured in transport. For nu = 1/3 and nu = 1/2, these spin-flip gaps allow the determination of the composite fermion interaction energy. This energy is investigated as a function of the finite width of the 2D channel.

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Absence of odd-even parity behavior for Kondo resonances in quantum dots.

Zero-bias anomalies in the conductance through quantum dots have recently been identified as Kondo resonances and explained in terms of the Anderson impurity model. The effect requires a degeneracy and it has been proposed that this should occur for odd electron numbers on the dot. In this paper we present data, obtained on a split-gate quantum dot with a small number of electrons, which are in disagreement with this expectation. The mapping of the Anderson model on the quantum dot is discussed in terms of an interacting N electron system demonstrating why this expectation can fail.

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Enhanced vortex damping by eddy currents in superconductor-semiconductor hybrids

An enhancement of vortex-motion damping in thin Pb/In superconducting films is obtained through coupling to an adjacent two-dimensional electron gas formed in a modulation-doped GaAs/AlGaAs heterostructure. This effect is observed by monitoring the power dissipation in the superconductor in the vortex state while increasing the density of the electron gas using a gate voltage. Quantitative agreement is found with calculations based on a viscous damping model which considers generation of eddy currents in the electron gas by moving flux lines. In the regime of filamentary vortex flow, eddy-current damping leads to a striking dissipation breakdown due to the stopping of entire vortex channels.

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The quantitative characterization of SiGe layers by analysing rocking profiles in CBED patterns.

Convergent beam electron diffraction is used for the quantitative determination of layer thickness, composition and strain in pseudomorphic Si/SiGe two- and three-layer systems grown by molecular beam epitaxy. By using plan-view specimens, we are able to avoid the influence of surface relaxation which generally complicates the determination of strains in cross-sectional specimens. For quantitative strain determination, rocking curves of Bragg lines in energy-filtered convergent beam electron diffraction patterns are analysed. The experimentally obtained rocking curves are compared with kinematical calculations by a computerized fit procedure. The resulting layer parameters are then further refined by a dynamical simulation. Results for the strains obtained with this technique are in good agreement with theoretical values. With this method layer thickness is measured down to monolayer precision. The accuracy of the strain analysis depends on the sequence and thickness of the layers.

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