Free energy of the concerted-exchange mechanism for self-diffusion in silicon.
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Biomedical subjects
KC Pandey
Publications and source records attributed to KC Pandey.
Localized orbital theory of electronic structure: A simple application.
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Contribution of concerted exchange to the entropy of self-diffusion in Si.
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Entropy calculation beyond the harmonic approximation: Application to diffusion by concerted exchange in Si.
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Evidence for trimer reconstruction of Si(111) sqrt 3 x sqrt 3 -Sb: Scanning tunneling microscopy and first-principles theory.
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Electronic states due to surface doping: Si(111) sqrt 3 x sqrt 3B.
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Scanning tunneling microscopy and first-principles theory of the Sn/GaAs(110) surface.
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Isolated As antisite in GaAs: Possibility of the EL2 defect.
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New classical potential for accurate simulation of atomic processes in Si.
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Energetics of defects and diffusion mechanisms in graphite.
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Annealing of heavily arsenic-doped silicon: Electrical deactivation and a new defect complex.
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Ab initio theory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111).
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Ab initio theory of polar semiconductor surfaces. II. (22) reconstructions and related phase transitions of GaAs(1-bar1-bar1-bar).
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Diffusion without vacancies or interstitials: A new concerted exchange mechanism.
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Variable stoichiometry surface reconstructions: New models for GaAs(1-bar1-bar1-bar) (2 x 2) and ( sqrt 1-bar9-bar x sqrt 1-bar9-bar).
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Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2.
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(2 x 2) reconstructions of the {111} polar surfaces of GaAs.
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