Demonstration of semiconductor characterization by phonon sidebands in photoluminescence.
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Biomedical subjects
KR Evans
Publications and source records attributed to KR Evans.
Increased screening of the hydrogenic donor due to modulation doping in quantum wells.
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Fine-structure features due to wave-function localization in coupled GaAs-AlxGa1-xAs quantum wells.
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Indirect photoreflectance from high-electron-mobility transistor structures.
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Light- and heavy-hole free-exciton transitions in narrow InxGa1-xAs/GaAs quantum wells.
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Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy.
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Photoluminescence determination of the binding energy of residual donors in 300-Å GaAs/AlxGa1-xAs quantum wells.
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Binding energy of excitons to neutral donors in In0.1Ga0.9As/GaAs quantum wells.
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Photoluminescence due to a bound-to-bound transition in a GaAs-Al0.3Ga0.7As quantum-well structure.
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Anomalous behavior of cyclotron resonance in GaAs/Al0.28Ga0.72As high-electron-mobility transistor structures.
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Origin of the blueshift in the intersubband infrared absorption in GaAs/Al0.3Ga0.7As multiple quantum wells.
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Effect of a magnetic field on the photoluminescence from InxGa1-xAs/GaAs and GaAs/AlxGa1-xAs quantum wells.
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Electric-field effects of the excitons in asymmetric triangular AlxGa1-xAs-GaAs quantum wells.
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Free-to-bound and light- and heavy-hole bound-exciton transitions in AlxGa1-xAs-GaAs multiple quantum wells.
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Direct coupling of heavy-hole free excitons in InxGa1-xAs/GaAs quantum wells with free excitons in the GaAs barrier.
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Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band.
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Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 degreesC: Observation of an EL2-like defect.
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Determination of the binding energy of excitons to neutral donors located at the center or edge of the well or at the center of the barrier in AlxGa1-xAs/GaAs multiple-quantum-well structures.
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