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Klaus H Ploog

Publications and source records attributed to Klaus H Ploog.

4 recordsLinked to original sources

Quantum degenerate exciton-polaritons in thermal equilibrium.

We study the momentum distribution and relaxation dynamics of semiconductor microcavity polaritons by angle-resolved and time-resolved spectroscopy. Above a critical pump level, the thermalization time of polaritons at positive detunings becomes shorter than their lifetime, and the polaritons form a quantum degenerate Bose-Einstein distribution in thermal equilibrium with the lattice.

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Coherent spin transport through dynamic quantum dots.

Spin transport and manipulation in semiconductors have been studied intensively with the ultimate goal of realizing spintronic devices. Previous work in GaAs has focused on controlling the carrier density, crystallographic orientation and dimensionality to limit the electron spin decoherence and allow transport over long distances. Here, we introduce a new method for the coherent transport of spin-polarized electronic wave packets using dynamic quantum dots (DQDs) created by the piezoelectric field of coherent acoustic phonons. Photogenerated spin carriers transported by the DQDs in undoped GaAs (001) quantum wells exhibit a spin coherence length exceeding 100 microm, which is attributed to the simultaneous control of the carrier density and the dimensionality by the DQDs during transport. In the absence of an applied magnetic field, we observe the precession of the electron spin induced by the internal magnetic field associated with the spin splitting of the conduction band (Dresselhaus term). The coherent manipulation of the precession frequency is also achieved by applying an external magnetic field.

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Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111).

Self-assembled columnar AlGaN/GaN nanocavities, with an active region of GaN quantum disks embedded in an AlGaN nanocolumn and cladded by top and bottom AlN/GaN Bragg mirrors, were grown. The nanocavity has no cracks or extended defects, due to the relaxation at the Si interface and to the nanocolumn free-surface to volume ratio. The emission from the active region matched the peak reflectivity by tuning the Al content and the GaN disks thickness. Quantum confinement effects that depend on both the disk thickness and the inhomogeneous strain distribution within the disks are clearly observed.

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