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Knut Deppert

Publications and source records attributed to Knut Deppert.

4 recordsLinked to original sources

Structural properties of <111>B -oriented III-V nanowires.

Controlled growth of nanowires is an important, emerging research field with many applications in, for example, electronics, photonics, and life sciences. Nanowires of zinc blende crystal structure, grown in the <111>B direction, which is the favoured direction of growth, usually have a large number of twin-plane defects. Such defects limit the performance of optoelectronic nanowire-based devices. To investigate this defect formation, we examine GaP nanowires grown by metal-organic vapour-phase epitaxy. We show that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets, resulting in a microfaceting of the nanowires. We discuss these findings in a nucleation context, where we present an idea on how the twin planes form. This investigation contributes to the understanding of defect formation in nanowires. One future prospect of such knowledge is to determine strategies on how to control the crystallinity of nanowires.

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Position-controlled interconnected InAs nanowire networks.

We demonstrate here a method for controlled production of complex self-assembled three-dimensional networks of InAs nanowires on a substrate, based on sequentially seeded epitaxial nanowire structures, or "nanotrees". A position-controlled array of trunk nanowires is first produced using lithographically defined Au particles as seeds. With these wires positioned along the proper crystallographic directions with respect to each other, nanotree branches grow toward neighboring trunks, connecting them together. Finally, we investigate the crystal structure of the interconnected nanotrees, demonstrating that branch growth after the contact with the second trunk has an epitaxial relationship to that trunk.

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Failure of the vapor-liquid-solid mechanism in Au-assisted MOVPE growth of InAs nanowires.

We report the temperature dependence of the Au-assisted growth of InAs nanowires in MOVPE. Extensive studies of the growth of such nanowires have attributed growth to the so-called vapor-liquid-solid (VLS) mechanism, with a liquid Au-In alloy particle. We assert here that growth is instead assisted by a solid particle and does not occur at all when the particle is a liquid. Thus the temperature range of InAs nanowire growth is limited by the melting of the Au-In alloy. Comparison with growth of InAs nanowires in the same system assisted by a layer of SiO(x) is used to support this conclusion.

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Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events.

The formation of nanostructures with controlled size and morphology has been the focus of intensive research in recent years. Such nanostructures are important in the development of nanoscale devices and in the exploitation of the properties of nanomaterials. Here we show how tree-like nanostructures ('nanotrees') can be formed in a highly controlled way. The process involves the self-assembled growth of semiconductor nanowires via the vapour-liquid-solid growth mode. This bottom-up method uses initial seeding by catalytic nanoparticles to form the trunk, followed by the sequential seeding of branching structures. Each level of branching is controlled in terms of branch length, diameter and number, as well as chemical composition. We show, by high-resolution transmission electron microscopy, that the branching mechanism gives continuous crystalline (monolithic) structures throughout the extended and complex tree-like structures. The controlled seeding method that we report here has potential as a generic means of forming complex branching structures, and may also offer opportunities for applications, such as the mimicking of photosynthesis in nanotrees.

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