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L Aballe

Publications and source records attributed to L Aballe.

4 recordsLinked to original sources

Formation of regular surface-supported mesostructures with periodicity controlled by chemical reaction rate.

We report a LEEM and XPEEM study of the formation of a variety of stationary two-dimensional metallic and oxygen structures in Au and Au + Pd adlayers on Rh(110) during water formation reaction. They result from chemically frozen spinodal decomposition and are created, preserved, or reversibly modified by tuning the reaction conditions. The wavelength of lamellar structures obtained at intermediate metal coverage is found to obey a power scaling law with respect to the reaction rate.

Letter↗

Tuning surface reactivity via electron quantum confinement.

The effect of electron quantum confinement on the surface reactivity of ultrathin metal films is explored by comparing the initial oxidation rate of atomically flat magnesium films of different thickness, using complementary microscopy techniques. Pronounced thickness-dependent variations in the oxidation rate are observed for well ordered films of up to 15 atomic layers. Quantitative comparison reveals direct correlation between the surface reactivity and the periodic changes in the density of electronic states induced by quantum-well states crossing the Fermi level.

Journal Article↗

Probing interface electronic structure with overlayer quantum-well resonances: Al/Si(111).

The dispersion of quantum-well resonances in ultrathin epitaxial Al films on Si(111) reveals energy- and wave vector-dependent reflection properties at the Al/Si interface. The substrate electronic structure strongly influences the phase shift of the electron waves upon reflection at the interface. Thus the details of the substrate electronic structure need to be taken into account for a complete analysis of metallic quantum-well resonances. Furthermore, the assumption of loss of parallel wave vector information upon reflection or transmission through a lattice-mismatched interface is challenged. The changes induced in the electronic structure of the overlayer can be used to probe the ground-state substrate band edges.

Journal Article↗

Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110).

The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+/-0.1 eV above the valence band maximum. The scanning tunneling microscopy (STM) images show only a time average of two degenerate geometries, due to a thermal flip motion between the mirror configurations. This leads to an apparently symmetric STM image, although the ground state atomic structure is nonsymmetric.

Journal Article↗