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Lin-Wang Wang

Publications and source records attributed to Lin-Wang Wang.

3 recordsLinked to original sources

Pseudopotential theory of Auger processes in CdSe quantum dots.

Auger rates are calculated for CdSe colloidal quantum dots using atomistic empirical pseudopotential wave functions. We predict the dependence of Auger electron cooling on size, on correlation effects (included via configuration interaction), and on the presence of a spectator exciton. Auger multiexciton recombination rates are predicted for biexcitons as well as for triexcitons. The results agree quantitatively with recent measurements and offer new predictions.

Journal Article↗

Two- versus three-dimensional quantum confinement in indium phosphide wires and dots.

The size dependence of the bandgap is the most identifiable aspect of quantum confinement in semiconductors; the bandgap increases as the nanostructure size decreases. The bandgaps in one-dimensional (1D)-confined wells, 2D-confined wires, and 3D-confined dots should evolve differently with size as a result of the differing dimensionality of confinement. However, no systematic experimental comparisons of analogous 1D, 2D or 3D confinement systems have been made. Here we report growth of indium phosphide (InP) quantum wires having diameters in the strong-confinement regime, and a comparison of their bandgaps with those previously reported for InP quantum dots. We provide theoretical evidence to establish that the quantum confinement observed in the InP wires is weakened to the expected extent, relative to that in InP dots, by the loss of one confinement dimension. Quantum wires sometimes behave as strings of quantum dots, and we propose an analysis to generally distinguish quantum-wire from quantum-dot behaviour.

Crystallization↗

Charge-density patching method for unconventional semiconductor binary systems.

A motif based charge patching method is presented for large system electronic structure calculations. It produces ab initio quality charge densities for large systems without actually doing self-consistent calculations for them. It represents a general faster alternative to the conventional O(N) methods. This method is applied here to unconventional semiconductor binary systems, and the resulting eigenenergies are found to be almost the same as the original ab initio eigenenergies (with 20-50 meV errors).

Journal Article↗