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M Bockrath

Publications and source records attributed to M Bockrath.

7 recordsLinked to original sources
PubMed2006

Carbon nanotube linear bearing nanoswitches.

We exploit the remarkable low-friction bearing capabilities of multiwalled carbon nanotubes (MWNTs) to realize nanoelectromechanical switches. Our switches consist of two open-ended MWNT segments separated by a nanometer-scale gap. Switching occurs through electrostatically actuated sliding of the inner nanotube shells to close the gap, producing a conducting ON state. For double-walled nanotubes in particular, a gate voltage can restore the insulating OFF state. Acting as a nonvolatile memory element capable of several switching cycles, our devices are straightforward to implement, self-aligned, and do not require complex fabrication or geometries, allowing for convenient scalability.

Electrochemistry↗
PubMed2005

Ballistic phonon thermal transport in multiwalled carbon nanotubes.

We report electrical transport experiments, using the phenomenon of electrical breakdown to perform thermometry, that probe the thermal properties of individual multiwalled carbon nanotubes. Our results show that nanotubes can readily conduct heat by ballistic phonon propagation. We determine the thermal conductance quantum, the ultimate limit to thermal conductance for a single phonon channel, and find good agreement with theoretical calculations. Moreover, our results suggest a breakdown mechanism of thermally activated C-C bond breaking coupled with the electrical stress of carrying approximately 10(12) A/m2. We also demonstrate a current-driven self-heating technique to improve the conductance of nanotube devices dramatically.

Journal Article↗
PubMed2001

Quantum phase slips in superconducting nanowires.

We have measured the resistance vs temperature of more than 20 superconducting nanowires with nominal widths ranging from 10 to 22 nm and lengths from 100 nm to 1 microm. With decreasing cross-sectional areas, the wires display increasingly broad resistive transitions. The data are in very good agreement with a model that includes both thermally activated phase slips close to T(c) and quantum phase slips (QPS) at low temperatures, but disagree with an earlier model based on a critical value of R(N)/R(q). Our measurements provide strong evidence for QPS in thin superconducting wires.

Journal Article↗
PubMed2001

Fabry - Perot interference in a nanotube electron waveguide.

The behaviour of traditional electronic devices can be understood in terms of the classical diffusive motion of electrons. As the size of a device becomes comparable to the electron coherence length, however, quantum interference between electron waves becomes increasingly important, leading to dramatic changes in device properties. This classical-to-quantum transition in device behaviour suggests the possibility for nanometer-sized electronic elements that make use of quantum coherence. Molecular electronic devices are promising candidates for realizing such device elements because the electronic motion in molecules is inherently quantum mechanical and it can be modified by well defined chemistry. Here we describe an example of a coherent molecular electronic device whose behaviour is explicitly dependent on quantum interference between propagating electron waves-a Fabry-Perot electron resonator based on individual single-walled carbon nanotubes with near-perfect ohmic contacts to electrodes. In these devices, the nanotubes act as coherent electron waveguides, with the resonant cavity formed between the two nanotube-electrode interfaces. We use a theoretical model based on the multichannel Landauer-Büttiker formalism to analyse the device characteristics and find that coupling between the two propagating modes of the nanotubes caused by electron scattering at the nanotube-electrode interfaces is important.

Electronics↗
PubMed2001

Resonant electron scattering by defects in single-walled carbon nanotubes.

We report the characterization of defects in individual metallic single-walled carbon nanotubes by transport measurements and scanned gate microscopy. A sizable fraction of metallic nanotubes grown by chemical vapor deposition exhibits strongly gate voltage-dependent resistance at room temperature. Scanned gate measurements reveal that this behavior originates from resonant electron scattering by defects in the nanotube as the Fermi level is varied by the gate voltage. The reflection coefficient at the peak of a scattering resonance was determined to be about 0.5 at room temperature. An intratube quantum dot device formed by two defects is demonstrated by low-temperature transport measurements.

Carbon↗
PubMed1997

Single-Electron Transport in Ropes of Carbon Nanotubes

The electrical properties of individual bundles, or "ropes," of single-walled carbon nanotubes have been measured. Below about 10 kelvin, the low-bias conductance was suppressed for voltages less than a few millivolts. In addition, dramatic peaks were observed in the conductance as a function of a gate voltage that modulated the number of electrons in the rope. These results are interpreted in terms of single-electron charging and resonant tunneling through the quantized energy levels of the nanotubes composing the rope.

Journal Article↗