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M Di Ventra

Publications and source records attributed to M Di Ventra.

5 recordsLinked to original sources

Infrared imaging of the nanometer-thick accumulation layer in organic field-effect transistors.

We report on infrared (IR) spectromicroscopy of the electronic excitations in nanometer-thick accumulation layers in field-effect transistor (FET) devices based on poly(3-hexylthiophene). IR data allows us to explore the charge injection landscape and uncovers the critical role of the gate insulator in defining relevant length scales. This work demonstrates the unique potential of IR spectroscopy for the investigation of physical phenomena at the nanoscale occurring at the semiconductor-insulator interface in FET devices.

Chemical Phenomena↗

Are current-induced forces conservative?

The expression for the force on an ion in the presence of current can be derived from first principles without any assumption about its conservative character. However, energy functionals have been constructed that indicate that this force can be written as the derivative of a potential. On the other hand, there exist specific arguments that strongly suggest the contrary. We propose physical mechanisms that invalidate such arguments and demonstrate their existence with first-principles calculations. While our results do not constitute a formal resolution to the fundamental question of whether current-induced forces are conservative, they represent a substantial step forward in this direction.

Journal Article↗

Current-induced forces in molecular wires.

We report first-principles calculations of current-induced forces in molecular wires for which experiments are available. We investigate, as an example, the effect of current-induced forces on a benzene molecule connected to two bulk electrodes via sulfur end groups. We find that the molecule twists around an axis perpendicular to its plane and undergoes a "breathing" oscillation at resonant tunneling via antibonding states. However, current-induced forces do not substantially affect the absolute value of the current for biases as high as 5 V, suggesting that molecular wires can operate at very large electric fields without current-induced breakdown.

Journal Article↗

Atomic-scale dynamics of the formation and dissolution of carbon clusters in SiO(2).

Oxidation of SiC produces SiO(2) while CO is released. A "reoxidation" step at lower temperatures is, however, necessary to produce high-quality SiO(2). This step is believed to cleanse the oxide of residual C without further oxidation of the SiC substrate. We report first-principles calculations that describe the nucleation and growth of O-deficient C clusters in SiO(2) under oxidation conditions, fed by the production of CO at the advancing interface, and their gradual dissolution by the supply of O under reoxidation conditions. We predict that both CO and CO(2) are released during both steps.

Journal Article↗

Temperature effects on the transport properties of molecules.

Recent experiments found an unusual temperature-induced large shift in the resonant-tunneling voltage of certain molecules. We report first-principles calculations showing that such behavior can be caused by the excitation of rotational modes of ligands. These modes have classical characteristics, i.e., the maximum excursion is dominant, while at the same time they have a significant effect on the energy levels responsible for resonant tunneling. The proposed mechanism of ligand rotations is unique to molecules and accounts for the fact that the effect is not seen in semiconductor nanostructures.

Journal Article↗