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M Henini

Publications and source records attributed to M Henini.

At least 19 recordsLinked to original sources

Imaging the electron wave function in self-assembled quantum dots.

Magnetotunneling spectroscopy is used as a noninvasive and nondestructive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The technique exploits the effect of the classical Lorentz force on the motion of a tunneling electron and can be regarded as the momentum (k) space analog of scanning tunneling microscopy imaging. The images reveal the elliptical symmetry of the ground state and the characteristic lobes of the higher energy states.

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Fine structure in magnetization of individual fluxoid states

Each time a vortex enters or exits a small superconductor, a different fluxoid state develops which can be characterized by its vorticity, i.e., the number of fluxoids inside. We have studied magnetization response of such individual states and found clear signatures of first and second order transitions within the states, which reveal the existence of distinct vortex phases for a fixed number of fluxoids. We attribute the transitions to the merger of individual vortices into a single giant vortex and switching between different arrays of vortices.

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Resistance resonance effects through magnetic edge states.

We report on the magnetoresistance of a two-dimensional electron gas subjected to an abrupt magnetic field gradient arising from a ferromagnetic stripe fabricated at its surface. A sharp resistance resonance effect is observed at B(p) due to the formation of two types of magnetic edge states that drift in opposite directions perpendicular to the magnetic field gradient for B B(p). A semiclassical drift-diffusion model gives a good description of the effects of the magnetic confinement on both the diagonal and off-diagonal components of the resistivity tensor.

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Landau-level spectroscopy of a two-dimensional electron system by tunneling through a quantum dot.

A single InAs self-assembled quantum dot is incorporated in the barrier of a tunnel diode and used as a spectroscopic probe of an adjacent two-dimensional electron system from the Fermi energy to the subband edge. We obtain quantitative information about the energy dependence of the quasiparticle lifetime. For magnetic field B, applied parallel to the current, we observe peaks in the current-voltage characteristics I(V) corresponding to the formation of Landau levels. Close to filling factor nu=1 we observe directly the exchange enhancement of the Lande g factor.

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Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case

We have investigated the In(Ga)As island formation, in the Stranski-Krastanov growth mode, on (311)A GaAs substrates. The surface topography of InAs and InGaAs strained epilayers was studied by contact microscopies. The different substrate affects the overgrown island shape. In(Ga)As grown on (311)A gives rise to quantum wire-like islands. Quantum dots (QDs), but with highly anisotropic shapes, are the outcomes of InAs deposition. QD samples were also characterized by photoluminescence (PL) measurements. Correlation between optical and morphological properties was observed.

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