Biomedical subjects

M K Nowotny

Publications and source records attributed to M K Nowotny.

6 recordsLinked to original sources

PubMed2006

Defect disorder of titanium dioxide.

The present work derived defect disorder diagram representing the effect of oxygen activity on the concentration of both ionic and electronic defects for undoped TiO2. This diagram was determined using the equilibrium constants derived in the present work, including (i) the intrinsic electronic equilibrium constant, (ii) the equilibrium constant for the formation of oxygen vacancies, and (iii) equilibrium constant for the formation of titanium vacancies. These equilibrium constants are consistent with three properties determined independently, including: electrical conductivity, thermoelectric power and change of mass determined by thermogravimetry. The derived defect disorder diagram may be used for tailoring semiconducting properties of TiO2 that are desired for specific applications through the selection of optimized processing conditions.

Journal Article↗

PubMed2006

TiO2 surface active sites for water splitting.

The mechanism of photoreactivity between the TiO(2) surface and H(2)O, and the related charge transfer, is considered in terms of both collective and local properties. It is shown that the effective charge transfer between TiO(2) and water requires the presence of surface active sites that are able to provide electron holes to adsorbed water molecules. Titanium vacancies located at or near the surface are identified as the active sites for water adsorption leading to the formation of an active complex and resulting, in consequence, in water splitting. A model of the photoreactivity between the TiO(2) surface and water is proposed. This model indicates that the photoreactivity of the TiO(2)-based photoelectrode may be enhanced through imposition of the surface active sites (Ti vacancies) in a controlled manner by surface engineering.

Journal Article↗

PubMed2006

Electrical properties and defect chemistry of TiO2 single crystal. I. Electrical conductivity.

The present work reports the electrical properties of high-purity single-crystal TiO(2) from measurements of the electrical conductivity in the temperature range 1073-1323 K and in gas phases of controlled oxygen activities in the range 10(-13) to 10(5) Pa. The effect of the oxygen activity on the electrical conductivity indicates that oxygen vacancies are the predominant defects in the studied ranges of temperature and oxygen activities. The electronic and ionic lattice charge compensations were revealed at low and high oxygen activities, respectively. The determined semiconducting quantities include: the activation energy of the electrical conductivity (E(sigma) = 125-205 kJ.mol(-1)), the activation energies of the electrical conductivity components associated with electrons (E(n) = 218 kJ.mol(-1)), electron holes (E(p) = 34 kJ.mol(-1)), and ions (E(i) = 227 kJ.mol(-1)), and the enthalpy of motion for electronic defects (DeltaH(m) = 4 kJ/mol). The electrical conductivity data are considered in terms of the components related to electrons, holes, and ions. The obtained data allow the determination of the n-p demarcation line in terms of temperature and oxygen activities. The band gap determined from the electronic component of the electrical conductivity is 3.1 eV.

Crystallization↗

PubMed2006

Electrical properties and defect chemistry of TiO2 single crystal. II. Thermoelectric power.

The present work reports the thermoelectric power of high-purity single-crystal TiO(2) in the temperature range 1073-1323 K and in gas phases of controlled oxygen activities, p(O(2)), in the range 10(-13) to 7.5 x 10(4) Pa. The thermoelectric power versus log p(O(2)) dependence for strongly reduced TiO(2) at p(O(2)) < 10(-5) Pa may be approximated by a slope of 1/6, which is consistent with the defect disorder governed by electronic charge compensation of oxygen vacancies. The thermoelectric power data confirm that oxygen vacancies are the predominant ionic defects. These data indicate that TiO(2) at high p(O(2)) exhibits p-type properties. It is shown that the p(O(2)) related to the n-p transition increases with increase of temperature.

Journal Article↗

PubMed2006

Electrical properties and defect chemistry of TiO2 single crystal. III. Equilibration kinetics and chemical diffusion.

The equilibration kinetics of high-purity single-crystal TiO(2) were monitored using measurements of electrical conductivity in the temperature range 1073-1323 K and oxygen activity, p(O(2)), range 10(-13) to 75 kPa. The kinetics data were used to determine the chemical diffusion coefficient (D(chem)) within narrow ranges of p(O(2)). There was observed a complex effect of the p(O(2)) on the D(chem), which exhibits a maximum at the n-p transition. The effect of the p(O(2)) on the D(chem) was discussed in terms of the defect disorder and the related semiconducting properties. The activation energy of the D(chem), which also varies with the p(O(2)), exhibits a maximum at p(O(2)) = approximately 10(4) Pa (143 kJ/mol).

Journal Article↗

PubMed2006

Electrical properties and defect chemistry of TiO2 single crystal. IV. Prolonged oxidation kinetics and chemical diffusion.

Measurements of both electrical conductivity and thermoelectric power were used to monitor the equilibration kinetics of undoped single-crystal TiO(2) during prolonged oxidation at 1123 and 1323 K and p(O(2)) = 75 kPa. Two kinetics regimes were revealed: kinetics regime I (rapid kinetics), which is rate-controlled by the transport of oxygen vacancies, and kinetics regime II (slow kinetics), which is rate-controlled by the transport of titanium vacancies. The incorporation of titanium vacancies allows undoped p-type TiO(2) to be processed in a controlled manner. The kinetics data were used to determine the chemical diffusion coefficient (D(chem)) associated with the transport of titanium vacancies, which is equal to D(chem) = 8.9 x 10(-14) m(2) s(-1) and D(chem) = 9.3 x 10(-15) m(2) s(-1) at 1323 and 1123 K, respectively.

Journal Article↗