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M L Roukes

Publications and source records attributed to M L Roukes.

9 recordsLinked to original sources
PubMed2006

Zeptogram-scale nanomechanical mass sensing.

Very high frequency (VHF) nanoelectromechanical systems (NEMS) provide unprecedented sensitivity for inertial mass sensing. We demonstrate in situ measurements in real time with mass noise floor approximately 20 zg. Our best mass resolution corresponds to approximately 7 zg, equivalent to approximately 30 xenon atoms or the mass of an individual 4 kDa molecule. Detailed analysis of the ultimate sensitivity of such devices based on these experimental results indicates that NEMS can ultimately provide inertial mass sensing of individual intact, electrically neutral macromolecules with single-Dalton (1 amu) resolution.

Equipment Design↗
PubMed2005

Nanomechanical measurement of magnetostriction and magnetic anisotropy in (Ga,Mn)As.

A GaMnAs nanoelectromechanical resonator is used to obtain the first measurement of magnetostriction in a dilute magnetic semiconductor. Resonance frequency shifts induced by field-dependent magnetoelastic stress are used to simultaneously map the magnetostriction and magnetic anisotropy constants over a wide range of temperatures. Owing to the central role of carriers in controlling ferromagnetic interactions in this material, the results appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

Journal Article↗
PubMed2004

Negative intrinsic resistivity of an individual domain wall in epitaxial (Ga,Mn)As microdevices.

Magnetic domains, and the boundaries that separate them (domain walls, DWs), play a central role in the science of magnetism. Understanding and controlling domains is important for many technological applications in spintronics, and may lead to new devices. Although theoretical efforts have elucidated several mechanisms underlying the resistance of a single DW, various experiments report conflicting results, even for the overall sign of the DW resistance. The question of whether an individual DW gives rise to an increase or decrease of the resistance therefore remains open. Here we report an approach to DW studies in a class of ferromagnetic semiconductors (as opposed to metals) that offer promise for spintronics. These experiments involve microdevices patterned from monocrystalline (Ga,Mn)As epitaxial layers. The giant planar Hall effect that we previously observed in this material enables direct, real-time observation of the propagation of an individual magnetic DW along multiprobe devices. We apply steady and pulsed magnetic fields, to trap and carefully position an individual DW within each separate device studied. This protocol reproducibly enables high-resolution magnetoresistance measurements across an individual wall. We consistently observe negative intrinsic DW resistance that scales with channel width. This appears to originate from sizeable quantum corrections to the magnetoresistance.

Journal Article↗
PubMed2003

Nanomechanical analog of a laser: amplification of mechanical oscillations by stimulated zeeman transitions.

We propose a magnetomechanical device that exhibits many properties of a laser. The device is formed by a nanocantilever and dynamically polarized paramagnetic nuclei of a solid sample in a strong external magnetic field. The corresponding quantum oscillator and effective two-level systems are coupled by the magnetostatic dipole-dipole interaction between a permanent magnet on the cantilever tip and the magnetic moments of the spins, so that the entire system is effectively described by the Jaynes-Cummings model. We consider the possibility of observing transient and cw lasing in this system, and show how these processes can be used to improve the sensitivity of magnetic resonance force microscopy.

Journal Article↗
PubMed2003

Giant planar Hall effect in epitaxial (Ga,Mn)as devices.

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

Journal Article↗
PubMed2002

Probe--sample coupling in the magnetic resonance force microscope.

The magnetic resonance force microscope (MRFM) provides a route to achieving scanned probe magnetic resonance imaging with extremely high spatial resolution. Achieving this capability will require understanding the force exerted on a microscopic magnetic probe by a spatially extended sample over which the probe is scanned. Here we present a detailed analysis of this interaction between probe and sample. We focus on understanding the situation where the micromagnet mounted on the mechanical resonator generates a very inhomogeneous magnetic field and is scanned over a sample with at least one spatial dimension much larger than that of the micromagnet. This situation differs quite significantly from the conditions under which most MRFM experiments have been carried out where the sample is mounted on the mechanical resonator and placed in a rather weak magnetic field gradient. In addition to the concept of a sensitive slice (the spatial region where the magnetic resonance condition is met) it is valuable to map the forces exerted on the probe by spins at various locations; this leads to the concept of the force slice (the region in which spins exert force on the resonator). Results of this analysis, obtained both analytically and numerically, will be qualitatively compared with an initial experimental finding from an EPR-MRFM experiment carried out on DPPH at 4 K.

Journal Article↗
PubMed2001

Spintronics: a spin-based electronics vision for the future.

This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

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