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M Shayegan

Publications and source records attributed to M Shayegan.

At least 19 recordsLinked to original sources

New phase transition between partially and fully polarized quantum Hall states with charge and spin gaps at nu = 2/3.

The average electron spin polarization Rho of a two-dimensional electron gas confined in GaAs/GaAlAs multiple quantum wells was measured by NMR near the fractional quantum Hall state with filling factor nu = 2/3. Above this filling factor (2/3< or = nu < 0.85), a strong depolarization is observed corresponding to two spin flips per additional flux quantum. The most remarkable behavior of the polarization is observed at nu = 2/3, where a quantum phase transition from a partially polarized (Rho approximately 3/4) to a fully polarized (Rho = 1) state can be driven by increasing the ratio between the Zeeman and the Coulomb energy above a critical value eta(c) = Delta(Z)/Delta(C) = 0.0185.

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In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems.

Using a novel technique, we make quantitative measurements of the spin polarization of dilute [ (3.4-6.8)x10(10) cm(-2)] GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating before it is fully spin polarized. The minority-spin population at the transition is approximately 8x10(9) cm(-2), close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.

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Resistance spikes at transitions between quantum hall ferromagnets.

We report a manifestation of first-order magnetic transitions in two-dimensional electron systems. This phenomenon occurs in aluminum arsenide quantum wells with sufficiently low carrier densities and appears as a set of hysteretic spikes in the resistance of a sample placed in crossed parallel and perpendicular magnetic fields, each spike occurring at the transition between states with different partial magnetizations. Our experiments thus indicate that the presence of magnetic domains at the transition starkly increases dissipation, an effect also suspected in other ferromagnetic materials. Analysis of the positions of the transition spikes allows us to deduce the change in exchange-correlation energy across the magnetic transition, which in turn will help improve our understanding of metallic ferromagnetism.

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Highly anisotropic g-factor of two-dimensional hole systems

Coupling the spin degree of freedom to the anisotropic orbital motion of two-dimensional (2D) hole systems gives rise to a highly anisotropic Zeeman splitting with respect to different orientations of an in-plane magnetic field B relative to the crystal axes. This mechanism has no analog in the bulk band structure. We obtain good, qualitative agreement between theory and experimental data, taken in GaAs 2D hole systems grown on (113) substrates, showing the anisotropic depopulation of the upper spin subband as a function of in-plane B.

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Anomalous thermopower in the metalliclike phase of a 2D hole system

We report very low temperature ( T) thermopower and resistivity ( rho) measurements on variable-density, two-dimensional hole systems confined to GaAs quantum wells. As the hole density is lowered from 1.49x10(11) cm(-2) to 0.14x10(11) cm(-2), the system crosses from an insulating ( drho / dT less, similar0) to a metallic regime ( drho / dT>0) and finally displays insulating behavior ( drho / dT<0). Diffusion thermopower shows a striking sign reversal in a narrow range of density in the metallic regime, suggesting a qualitative change in the conduction or the scattering mechanism.

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Topographic mapping of the quantum hall liquid using a few-electron bubble

A scanning probe technique was used to obtain a high-resolution map of the random electrostatic potential inside the quantum Hall liquid. A sharp metal tip, scanned above a semiconductor surface, sensed charges in an embedded two-dimensional (2D) electron gas. Under quantum Hall effect conditions, applying a positive voltage to the tip locally enhanced the 2D electron density and created a "bubble" of electrons in an otherwise unoccupied Landau level. As the tip scanned along the sample surface, the bubble followed underneath. The tip sensed the motions of single electrons entering or leaving the bubble in response to changes in the local 2D electrostatic potential.

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Anisotropic magnetoresistance of two-dimensional holes in GaAs

Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures reveal a remarkable dependence of the magnetoresistance, measured with an in-plane magnetic field ( B), on the direction of B relative to both the crystal axes and the current direction. The magnetoresistance features, and in particular the value of B above which the resistivity exhibits an insulating behavior, depend on the orientation of B. To explain the data, the anisotropic band structure of the holes and a repopulation of the spin subbands in the presence of B, as well as the coupling of the orbital motion to B, need to be taken into account.

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Anomalous magneto-oscillations in two-dimensional systems

The frequencies of Shubnikov-de Haas oscillations have long been used to measure the unequal population of spin-split two-dimensional subbands in inversion asymmetric systems. We report self-consistent numerical calculations and experimental results which indicate that these oscillations are not simply related to the zero-magnetic-field spin-subband densities.

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NMR determination of 2D electron spin polarization at nu = 1/2

Using a "standard" NMR spin-echo technique we determined the spin polarization P of two-dimensional electrons, confined to GaAs quantum wells, from the hyperfine shift of Ga nuclei located in the wells. Concentrating on the temperature ( 0.05 less, similarT less, similar10 K) and magnetic field ( 7 less, similarB less, similar17 T) dependencies of P at Landau level filling factor nu = 1/2, we find that the results are described well by a simple model of noninteracting composite fermions, although some inconsistencies remain when the two-dimensional electron system is tilted in the magnetic field.

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The effect of spin splitting on the metallic behavior of a two-dimensional system

Experiments on a constant-density two-dimensional hole system in a gallium arsenide quantum well revealed that the metallic behavior observed in the zero-magnetic-field temperature dependence of the resistivity depends on the symmetry of the confinement potential and the resulting spin splitting of the valence band.

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