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M T Postek

Publications and source records attributed to M T Postek.

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Image sharpness measurement in the scanning electron-microscope--part III.

Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. Testing and proving that the instrument is performing at a satisfactory level of sharpness is an important aspect of quality control. The application of Fourier analysis techniques to the analysis of SEM images is a useful methodology for sharpness measurement. In this paper, a statistical measure known as the multivariate kurtosis is proposed as an additional useful measure of the sharpness of SEM images. Kurtosis is designed to be a measure of the degree of departure of a probability distribution. For selected SEM images, the two-dimensional spatial Fourier transforms were computed. Then the bivariate kurtosis of this Fourier transform was calculated as though it were a probability distribution. Kurtosis has the distinct advantage that it is a parametric (i.e., a dimensionless) measure and is sensitive to the presence of the high spatial frequencies necessary for acceptable levels of image sharpness. The applications of this method to SEM metrology will be discussed.

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Application of the low-loss scanning electron microscope image to integrated circuit technology. Part 1--Applications to accurate dimension measurements.

Scanning electron microscopes (SEMs) are the most extensively used tools for dimensional metrology and defect inspection for integrated circuit technologies with 180 nm and smaller features. Currently, almost all SEMs are designed to collect as many secondary and backscattered electrons as possible. These signals are mainly secondary electrons (SE1, SE2, and SE3) detected with various detection schemes. To facilitate the electron collection, very strong electric and magnetic fields are applied not just in the path of the primary electron beam but to the emerging electrons as well. These new systems provide strong signals, thus better signal-to-noise ratio, and thus resulting in higher throughput than older ones. On the other hand, the use of secondary electrons means that measurement results are much more prone to the detrimental effects of electron beam interactions, sample charging, and sample contamination than measurements with higher-energy backscattered electrons. The use of backscattered electrons, especially low-loss electrons (LLE), can provide better surface sensitivity, edge accuracy, and repeatability, possibly at the expense of measurement speed. This two-part study investigates the benefits and drawbacks of low-loss electron imaging to edge characterization for dimensional metrology and enhancement of fine surface features done through filtration or separation of the generated LLE signal and the use of energy-dependent signals. Part 1 reviews and illustrates the potential for accurate dimensional measurements at low accelerating voltage by LLE, and Part 2 will concentrate on the enhancement of surface features in chemical-mechanically planarized specimens with the use of a novel LLE detector.

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Application of the low-loss scanning electron microscope image to integrated circuit technology part II--chemically-mechanically planarized samples.

Chemical-mechanical planarization (CMP) is a process that gives a flat surface on a silicon wafer by removing material from above a chosen level. This flat surface must then be reviewed (typically using a laser) and inspected for scratches and other topographic defects. This inspection has been done using both the atomic force microscope (AFM) and the scanning electron microscope (SEM), each of which has its own advantages and disadvantages. In this study, the low-loss electron (LLE) method in the SEM was applied to CMP samples at close to a right angle to the beam. The LLEs show shallower topographic defects more clearly than it is possible with the secondary electron (SE) imaging method. These images were then calibrated and compared with those obtained using the AFM, showing the value of both methods. It is believed that the next step is to examine such samples at a right angle to the beam in the SEM using the magnetically filtered LLE imaging method.

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