Biomedical subjects

M Y Simmons

Publications and source records attributed to M Y Simmons.

14 recordsLinked to original sources

PubMed2006

Zeeman splitting in ballistic hole quantum wires.

We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an in-plane magnetic field B is applied parallel to the wire. When B is oriented perpendicular to the wire, no spin splitting is discernible up to B = 8.8 T. The observed large Zeeman splitting anisotropy in our hole quantum wires demonstrates the importance of quantum confinement for spin splitting in nanostructures with strong spin-orbit coupling.

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PubMed2006

Thermodynamic density of states of two-dimensional GaAs systems near the apparent metal-insulator transition.

We perform combined resistivity and compressibility studies of two-dimensional hole and electron systems which show the apparent metal-insulator transition--a crossover in the sign of deltaR/deltaT with changing density. No thermodynamic anomalies have been detected in the crossover region. Instead, despite a tenfold difference in r(s), the compressibility of both electrons and holes is well described by the theory of nonlinear screening of the random potential. We show that the resistivity exhibits a scaling behavior near the percolation threshold found from analysis of the compressibility. Notably, the percolation transition occurs at a much lower density than the crossover.

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PubMed2004

Phosphine dissociation on the Si(001) surface.

Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH3) dosing of the Si(001) surface. On the basis of a comprehensive survey of possible structures, energetics, and simulated STM images, three prominent STM features are assigned to structures containing surface bound PH2, PH, and P, respectively. Collectively, the assigned features outline for the first time a detailed mechanism of PH3 dissociation and P incorporation on Si(001).

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PubMed2004

Fano factor reduction on the 0.7 conductance structure of a ballistic one-dimensional wire.

We have measured the nonequilibrium current noise in a ballistic one-dimensional wire which exhibits an additional conductance plateau at 0.7x2e(2)/h. The Fano factor shows a clear reduction on the 0.7 structure, and eventually vanishes upon applying a strong parallel magnetic field. These results provide experimental evidence that the 0.7 structure is associated with two conduction channels that have different transmission probabilities.

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PubMed2003

Atomically precise placement of single dopants in si.

We demonstrate the controlled incorporation of P dopant atoms in Si(001), presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si(001) and show that it is possible to thermally incorporate P atoms into Si(001) below the H-desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H lithography. We demonstrate the positioning of single P atoms in Si with approximately 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.

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PubMed2003

Interaction effects at crossings of spin-polarized one-dimensional subbands.

We report conductance measurements of ballistic one-dimensional (1D) wires defined in GaAs/AlGaAs heterostructures in an in-plane magnetic field, B. When the Zeeman energy is equal to the 1D subband energy spacing, the spin-split subband N upward arrow intersects (N+1) downward arrow, where N is the index of the spin-degenerate 1D subband. At the crossing of N=1 upward arrow and N=2 downward arrow subbands, there is a spontaneous splitting giving rise to an additional conductance structure evolving from the 1.5(2e(2)/h) plateau. With further increase in B, the structure develops into a plateau and lowers to 2e(2)/h. With increasing temperature and magnetic field the structure shows characteristics of the 0.7 structure. Our results suggest that at low densities a spontaneous spin splitting occurs whenever two 1D subbands of opposite spins cross.

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PubMed2003

Progress in silicon-based quantum computing.

We review progress at the Australian Centre for Quantum Computer Technology towards the fabrication and demonstration of spin qubits and charge qubits based on phosphorus donor atoms embedded in intrinsic silicon. Fabrication is being pursued via two complementary pathways: a 'top-down' approach for near-term production of few-qubit demonstration devices and a 'bottom-up' approach for large-scale qubit arrays with sub-nanometre precision. The 'top-down' approach employs a low-energy (keV) ion beam to implant the phosphorus atoms. Single-atom control during implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure. In contrast, the 'bottom-up' approach uses scanning tunnelling microscope lithography and epitaxial silicon overgrowth to construct devices at an atomic scale. In both cases, surface electrodes control the qubit using voltage pulses, and dual single-electron transistors operating near the quantum limit provide fast read-out with spurious-signal rejection.

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PubMed2002

Origin of the oscillator strength of the triplet state of a trion in a magnetic field.

The dynamics of the spin-triplet trion state, under high magnetic field in a GaAs/AlGaAs quantum well, are studied using time resolved spectroscopy. The oscillator strength of the triplet transition is shown to rise with increasing electron density, in good agreement with a theoretical model where the trion interacts with excess electrons in the quantum well. This analysis suggests that the spin-triplet trion state, which is expected to be an optically "dark" state, is experimentally observable due to the interactions with the excess electrons, demonstrating that X- cannot be regarded as an isolated three particle complex.

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PubMed2002

Precession and motional slowing of spin evolution in a high mobility two-dimensional electron gas.

Optical spin-dynamic measurements in a high-mobility n-doped GaAs/AlGaAs quantum well show oscillatory evolution at 1.8 K consistent with a quasi-collision-free D'yakonov-Perel'-Kachorovskii regime. Above 5 K evolution becomes exponential as expected for collision-dominated spin dynamics. Momentum scattering times extracted from Hall mobility and Monte Carlo simulation of spin polarization agree at 1.8 K but diverge at higher temperatures, indicating the importance of electron-electron scattering and an intrinsic upper limit for the spin-relaxation rate.

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PubMed2002

Kondo effect in a quantum antidot.

We report Kondo-like behavior in a quantum antidot (a submicron depleted region in a two-dimensional electron gas) in the quantum-Hall regime. When both spins of the lowest Landau level are present all around the antidot, the resonances between extended edge states via antidot bound states show an abnormal feature in alternate Coulomb-blockaded regions. The feature becomes suppressed when the temperature or source-drain bias is raised as for Kondo resonances in quantum dots. Although the exact mechanism is unknown, Kondo-like correlated tunneling may arise from a Skyrmion-type edge reconstruction. This observation demonstrates the generality of the Kondo phenomenon.

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PubMed2002

Hole-hole interaction effect in the conductance of the two-dimensional hole gas in the ballistic regime.

On a high-mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAs heterostructure we study the interaction correction to the Drude conductivity in the ballistic regime, k(B)Ttau/ variant Planck's over 2pi >1. It is shown that the "metallic" behavior of the resistivity (drho/dT>0) of the low-density 2DHG is caused by the hole-hole interaction effect in this regime. We find that the temperature dependence of the conductivity and the parallel-field magnetoresistance are in agreement with this description, and determine the Fermi-liquid interaction constant Fsigma0 which controls the sign of drho/dT.

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PubMed2001

Observation of charge transport by negatively charged excitons.

We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X-), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast, neutral excitons do not drift under similar conditions. The X- mobility is found to be as high as 6.5 x 10(4) cm2 V-1 s-1. The results demonstrate that X- exists as a free particle in the best-quality samples and suggest that light emission from opto-electronic devices can be manipulated through exciton drift under applied electric fields.

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PubMed2001

Metallic behavior in dilute two-dimensional hole systems.

We have studied the metallic behavior in low-density two-dimensional p-GaAs systems, close to the apparent metal-insulator transition. Two observations are made concerning the origins of the metallic-like behavior. Within a given sample the strength of the metallic behavior is almost independent of the asymmetry of the confining potential, and is predominantly determined by the low-temperature resistivity (i.e., by k(F)l). In all our samples we find that at low densities, close to the transition from insulating to metallic behavior, the fractional decrease in conductivity with increasing temperature scales as T/T(F).

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PubMed2001

Fermi-liquid behavior of the low-density 2D hole gas in a GaAs/AlGaAs heterostructure at large values of r(s).

We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from "metallic"-to-"insulating" behavior of rho(T). It has been established that, at r(s) as large as 29, negative magnetoresistance does exist and is well described by weak localization theory. The dephasing time, extracted from the magnetoresistance, is dominated by the T2 term due to hole-hole scattering in the clean limit. The effect of hole-hole interactions, however, is suppressed when compared with the theory derived for small r(s).

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