Dynamics-Induced Surface Metallization of Si(100).
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Biomedical subjects
MG Betti
Publications and source records attributed to MG Betti.
Overlayer growth and electronic properties of the Bi/GaSb(110) interface.
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Epitaxial continued-layer structure of Sb on GaAs(110) as observed by grazing-incidence x-ray diffraction.
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Structural analysis of the (1 x 1)-Bi/GaAs(110) interface.
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Space-charge layer, metallization, and collective excitations of the Bi/GaAs(110) interface.
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Bismuth on GaSb(110): Electronic and dielectric properties.
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Quantum size effects and temperature dependence of low-energy electronic excitations in thin Bi crystals.
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Bismuth and antimony on GaAs(110): Dielectric and electronic properties.
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Antimony-induced electronic states in the Sb/InP(110) interface studied by high-resolution electron-energy-loss spectroscopy.
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Cation surface excitons in Sb/III-V interfaces.
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Inelastic-electron-scattering investigation of clean and hydrogen-exposed InP(110) surfaces.
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Inelastic electron scattering investigation of the Sb/GaAs(110) system.
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Observation of a new mode in the energy-loss spectrum of the Sb/GaAs(110) system.
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Azimuthal dependence of the vibrational excitation in Si(111)-(2 x 1).
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Collective and vibrational excitations on the n-doped GaAs(110) surface.
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L2,3 absorption edges in Ni2Si.
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