Reply to "Comment on 'Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells"'
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Biomedical subjects
MO Manasreh
Publications and source records attributed to MO Manasreh.
Intersubband transitions in strained In0.07Ga0.93As/Al0.40Ga0.60As multiple quantum wells and their application to a two-colors photodetector.
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Effects of the screened exchange interaction on the tunneling and Landau gaps in double quantum wells.
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Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition.
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Many-body analysis of the effects of electron density and temperature on the intersubband transition in GaAs/AlxGa1-xAs multiple quantum wells.
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Temperature and many-body effects on the intersubband transition in a GaAs/Al0.3Ga0.7As multiple quantum well.
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Phonon coupling associated with free-to-bound and bound-to-bound transitions in GaAs layers grown by molecular-beam epitaxy.
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Intersubband optical absorption in heavily doped n-type GaAs/Al0.3Ga0.7As multiple quantum wells.
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Indirect photoreflectance from high-electron-mobility transistor structures.
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Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy.
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Anomalous behavior of cyclotron resonance in GaAs/Al0.28Ga0.72As high-electron-mobility transistor structures.
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Origin of the blueshift in the intersubband infrared absorption in GaAs/Al0.3Ga0.7As multiple quantum wells.
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Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense EL2-like band.
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Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 degreesC: Observation of an EL2-like defect.
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Quenching and recovery characteristics of the EL2 defect in GaAs under monochromatic-light illumination.
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Noncreation of the EL2 defect in neutron-irradiated GaAs.
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Photoquenching and photoinduced-recovery properties of the EL2 defect in GaAs: Evidence against the identification of EL2 with the isolated AsGa defect.
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Infrared absorption properties of the EL2 and the isolated AsGa defects in neutron-transmutation-doped GaAs: Generation of an EL2-like defect.
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