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Mark Lundstrom

Publications and source records attributed to Mark Lundstrom.

4 recordsLinked to original sources
PubMed2004

High-field quasiballistic transport in short carbon nanotubes.

Single walled carbon nanotubes with Pd Ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean-free path (MFP) for acoustic phonon scattering is estimated to be l(ap) approximately 300 nm, and that for optical phonon scattering is l(op) approximately 15 nm. Transport through very short (approximately 10 nm) nanotubes is free of significant acoustic and optical phonon scattering and thus ballistic and quasiballistic at the low- and high-bias voltage limits, respectively. High currents of up to 70 microA can flow through a short nanotube. Possible mechanisms for the eventual electrical breakdown of short nanotubes at high fields are discussed. The results presented here have important implications to high performance nanotube transistors and interconnects.

Journal Article↗
PubMed2003

Ballistic carbon nanotube field-effect transistors.

A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to date has been the presence of a Schottky barrier at the nanotube--metal junctions. These energy barriers severely limit transistor conductance in the 'ON' state, and reduce the current delivery capability--a key determinant of device performance. Here we show that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotubes, greatly reduces or eliminates the barriers for transport through the valence band of nanotubes. In situ modification of the electrode work function by hydrogen is carried out to shed light on the nature of the contacts. With Pd contacts, the 'ON' states of semiconducting nanotubes can behave like ohmically contacted ballistic metallic tubes, exhibiting room-temperature conductance near the ballistic transport limit of 4e(2)/h (refs 4-6), high current-carrying capability (approximately 25 micro A per tube), and Fabry-Perot interferences at low temperatures. Under high voltage operation, the current saturation appears to be set by backscattering of the charge carriers by optical phonons. High-performance ballistic nanotube field-effect transistors with zero or slightly negative Schottky barriers are thus realized.

Journal Article↗
PubMed2002

High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates.

The integration of materials having a high dielectric constant (high-kappa) into carbon-nanotube transistors promises to push the performance limit for molecular electronics. Here, high-kappa (approximately 25) zirconium oxide thin-films (approximately 8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for nanotube field-effect transistors. The p-type transistors exhibit subthreshold swings of S approximately 70 mV per decade, approaching the room-temperature theoretical limit for field-effect transistors. Key transistor performance parameters, transconductance and carrier mobility reach 6,000 S x m(-1) (12 microS per tube) and 3,000 cm2 x V(-1) x s(-1) respectively. N-type field-effect transistors obtained by annealing the devices in hydrogen exhibit S approximately 90 mV per decade. High voltage gains of up to 60 are obtained for complementary nanotube-based inverters. The atomic-layer deposition process affords gate insulators with high capacitance while being chemically benign to nanotubes, a key to the integration of advanced dielectrics into molecular electronics.

Carbon↗