Biomedical subjects
Publications and source records attributed to Masahiro Hirano.
We report superconductivity in an iron-based layered oxy-pnictide LaOFeP. LaOFeP is composed of an alternate stack of lanthanum oxide (La3+O2-) and iron pnictide (Fe2+P3-) layers. Magnetic and electrical resistivity measurements verify the occurrence of the superconducting transition at approximately 4 K.
An interstitial hydroxyl radical (HO*) has been generated in bulk amorphous SiO2 (a-SiO2) loaded with interstitial H2O molecules and exposed to F2 laser light (hnu = 7.9 eV, lambda = 157 nm) at 77 K. F2 laser light dissociates an O-H bond of interstitial H2O into a pair of hydrogen atom (H0) and HO*. The resultant H0 disappears below 150 K, whereas HO* is detectable after thermal annealing at 200 K. The electron paramagnetic resonance (EPR) signal of the interstitial HO* recorded at 77 K is similar to that formed in amorphous ice, indicating that HO* is confined in an orthorhombic field by hydrogen bonding, probably with adjacent H2O molecules, silanol (SiOH) groups, and bridging oxygen atoms in the a-SiO2 network.
A procedure to produce stable hydroperoxy radicals (HO*2) in bulk amorphous SiO(2) (a-SiO(2)) has been developed. Oxygen molecules incorporated in the interstitial voids in a-SiO(2) react with mobile hydrogen atoms (H(0)) generated by the photolysis of silanol (SiOH) groups with F(2)-laser light (lambda = 157 nm, hnu = 7.9 eV), resulting in the efficient creation of interstitial HO*2. The high yield of HO*2 suggests that the collisions of the reaction intermediate with the void wall play an important role in dissipating the excess energy of the intermediate instead of the triple collision observed in the gas phase reaction. The resultant HO*2 is thermally stable up to 100 degrees C.
The codoping effect mechanism of Al and P on the solubility enhancement of Er(3+) ion in SiO(2) glass was clarified by electron spin-echo envelope modulation spectroscopy. It turned out that doped P ions preferentially coordinate to the Er(3+) ion to form a "solvation shell structure", and the environment is similar to that in phosphate glass, while doped Al ions do not form such a selective solvation structure, taking octahedral coordination. This striking difference indicates that the primary roles of the P-doping and the Al-doping are attributed to "enthalpy of mixing" and to "entropy of mixing", respectively.
We have developed a unique multistep film growth technique, combining reactive solid-phase epitaxy (R-SPE) with an intercalation process, to fabricate epitaxial films of superconducting sodium-cobalt oxyhydrate, Na(0.3)CoO2.1.3H2O. An epitaxial film of Na(0.8)CoO2 grown on an alpha-Al2O3(0001) substrate by R-SPE was subjected to oxidation and hydration treatment, leading to the formation of a Na(0.3)CoO2.1.3H2O epitaxial film. The film exhibited metallic electrical resistivity with a superconducting transition at 4 K, similar to that of bulk single crystals. The present technique is suitable and probably the only method for the epitaxial growth of superconducting Na(0.3)CoO2.1.3H2O.
A nucleation thermodynamic model was developed to clarify the diameter-dependent crystallographic orientation of silicon nanowires (SiNWs) grown via the vapor-liquid-solid (VLS) mechanism with an Au catalyst. The calculated critical energies (E(r*)) and corresponding critical radii (r*) of the SiNWs with <111> and <110> orientations as a function of Au-catalyst size (D(Au)) revealed that the 110-oriented SiNW with r is preferred below D(Au) = approximately 25 nm, but the preferred direction changes to <111> above D(Au) = approximately 25 nm. The model indicated that the nucleated SiNW with a radius (r) above r is stable and continues to grow until the diameter becomes equal to D(Au) but that the crystallographic orientation is maintained. Thus, the predicted growth direction of the final SiNW with a size of D(Au) is <110> for D(Au) < approximately 25 nm and <111> for D(Au) > approximately 25 nm, which is in excellent agreement with reported experimental results.
The 12CaO.7Al2O3 (C12A7) crystal with a nanoporous lattice framework exhibits high electrical conductivity with an activation energy of approximately 1.5 eV when equilibrated in a hydrogen atmosphere above approximately 800 degrees C. The high conductivity is preserved in a quenched state below approximately 600 degrees C with a reduced activation energy of approximately 0.8 eV. Such complex behavior in electrical conductivity is associated with incorporation of hydride ions (H-) in cages of the lattice framework. Electromotive force measurements reveal that the major carrier for the conductivity is electron with a small contribution by proton (H+), ruling out the possibility of direct intercage migration of the H- ion. A combination of these observations with the ab initio calculations leads to the conclusion that the electrons are thermally generated from the H- ion by the dissociation into two electrons and an proton, which is further converted to an OH- ion via reaction with an extraframework oxide ion (O2-). The energy difference between the initial (H- + O2-) and the final (2e- + OH-) states as evaluated by the theoretical calculation is as small as approximately 1 eV, which agrees well with an experimentally obtained enthalpy change, approximately 1.4 eV. Thus, internal equilibration between the extraframework hydrogen and the oxygen species is responsible for the thermal generation of the carrier electron. It is also suggested that the same conductive (2e- + OH-) state is reached by the photoirradiation of H- -containing C12A7. In this case the photoionization of H- forms an electron and an Ho atom, which then forms an OH- ion and another electron with thermal assistance. The persistence of photoinduced conductivity is explained by the slow kinetics of the reverse process at room temperature.
Atomic hydrogen (H0) and trapped electrons generated by UV illumination (lambda approximately 330 nm) at 4 K were observed using electron paramagnetic resonance (EPR) in a 12CaO.7Al2O3 (C12A7) crystal heated in a hydrogen atmosphere. The concentration ratio of generated H0 to the electrons encaged in the subnanometer-sized cages of C12A7 (F+ centers) is almost 1:1, providing direct evidence that a hydride ion, H-, accommodated in the cage by the heat treatment was dissociated to a pair of an H0 and an electron by a UV photon: H- --> H0 + e- (F+). After annealing at 300 K, H0 was completely annihilated, while approximately 60% of the trapped electrons survived. The remaining electrons can hop between neighboring cages and give electrical conductivity to C12A7. The hyperfine splitting of the EPR spectrum of H0 in C12A7 (48.6 mT) is 4% smaller than that of the neutral hydrogen atom (50.6 mT), implying that H0 is trapped at the interstitial sites among the cages.
We have examined the thermodynamics and kinetics of hydroxide (OH-) ions that formed in cages of 12 CaO x 7 Al2O3 (C12A7) with nanoporous structures. It is confirmed using thermogravimetric-evolved gas analyses (TG-EGA) that hydration in C12A7 is mediated by a reaction between an oxide (O2-) ion in the cage and an H2O molecule in the atmosphere to form two OH- ions in the cages. To simply and exactly quantify the OH- content from infrared absorption measurements of OH-stretching band, we propose a method combined with a thermodynamic analysis, allowing the simultaneous determination of the molar extinction coefficient of the OH-band, enthalpy, and entropy for the hydration. Hydration enthalpy in C12A7 is extremely high compared with other oxides and was enhanced by the marked instability of O2- ion in the cage. Consequently, high solubility of OH- ion is retained up to unusually high temperatures. Furthermore, we determined diffusion coefficients of species relevant to the hydration process and demonstrated that inward diffusion of OH- ions is the rate-determining process.
Electrides are ionic compounds in which electrons act as anions. These compounds are expected to have interesting properties arising from their exotic structure. The fatal drawbacks of the thermal and chemical instability of organic electrides were resolved by the synthesis of a room temperature (RT) stable electride using single crystalline 12CaO.7Al2O3 (C12A7) with a nanoporous structure and the chemical treatments for a long duration. However, an innovative fabrication method is obviously required for practical applications such as cold electron-emitter and thermionic devices. Herein we report a simple synthesis for polycrystalline C12A7 electrides with a moderate electronic conductivity via a strongly reducing C12A7 "melt", i.e., direct solidification of the melt or crystallization of the transparent glass. Generation of carrier electrons and precipitation of the C12A7 phase from the strongly reducing melt and glass are likely associated with the incorporation of carbon-related anions for stabilizing the C12A7 phase and keeping the mobile electrons in C12A7. These findings will be broadly utilized for applications by mass production in a desired shape and dimension, facilitating the research of electrides.
Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H) and organic semiconductors have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material--namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)--for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V(-1) s(-1), which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9 cm2 V(-1) s(-1), and device characteristics are stable during repetitive bending of the TTFT sheet.
Degenerate four-wave mixing signals excited by femtosecond laser pulses were measured in LaCuOCh (Ch = S and Se) at 4 K. The signals for LaCuOS exhibit a beat structure with a period of 480 fs just at the exciton peak energy, indicating that the lowest exciton states are split by 9 meV, but no beat structure was observed in LaCuOSe, regardless of the laser's energy. The spin--orbit interaction of the Ch ion accompanied by the hybridization of Cu 3d orbitals causes splitting of the exciton levels. Furthermore, the contribution of Ch p orbitals in the valence band maximum is larger in LaCuOSe owing to increased covalency in the Cu--Ch bond when S is replaced with Se.
Correlations between the refractive-index change and the concentration of an oxygen-deficient center (ODC) induced by thermal treatments and laser irradiation are examined to clarify the origin of laser-induced volume compaction in synthetic SiO2 glasses. A linear correlation between them was clearly observed for thermally induced ODC, whereas no correlation was found for ArF or F2 laser irradiation. The results demonstrate that the dominant origin of laser-induced compaction is not ODC formation. Furthermore, we found that the presence of H2 in SiO2 glass had no influence on volume compaction but enhanced crack formation upon laser irradiation, a phenomenon most likely due to stress corrosion.
The role of mobile interstitial oxygen atoms (O(0)) in defect processes in oxides is demonstrated by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass. Superstoichiometric O(0) was created by F2 laser photolysis of the interstitial O2. On annealing above 300 degrees C, O(0) migrated and converted the oxygen dangling bond to POR. Exposure to 5.0 eV light converted POR back to a pair of the oxygen dangling bond and O(0) (quantum yield: approximately 0.1). These findings suggest that various defect processes typically occurring in SiO2 glass at approximately 300-500 degrees C are related to migration of O(0), which exists in the glass network in the peroxy linkage form.
The nanoporous main group oxide 12CaO.7Al(2)O3 (C12A7) can be transformed from a wide-gap insulator to an electride where electrons substitute anions in cages constituting a positive frame. Our ab initio calculations of the electronic structure of this novel material give a consistent explanation of its high conductivity and optical properties. They show that the electrons confined in the inert positive frame are localized in cages and undergo hopping between neighboring cages. The results are useful for the understanding of behavior of confined electron gas of different topology and electron-phonon coupling, and for designing new transparent conductors, electron emitters, and electrides.
We removed approximately 100% of clathrated oxygen ions from the crystallographic cages in a single crystal of 12CaO.7Al2O3, leading to the formation of high-density (approximately 2 x 10(21) cm-3) electrons highly localized in the cages. The resulting electron forms a structure that we interpret as an F+ center and migrates throughout the crystal by hopping to a neighboring cage with conductivity approximately 100 siemens per centimeter, demonstrating that the encaged electron behaves as an anion. The electron anions couple antiferromagnetically with each other, forming a diamagnetic pair or singlet bipolaron. The resulting [Ca24Al28O64]4+(4e-) may be regarded as a thermally and chemically stable single crystalline "electride."
We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of approximately 106 and a field-effect mobility of approximately 80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.
The electronic structure and the nature of optical transitions in oxygen dangling bond in silica glass, the nonbridging oxygen hole center (NBOHC), were calculated. The calculation reproduced well the peak positions and oscillator strengths of the well-known optical absorption bands at 2.0 and 4.8 eV, and of the recently discovered absorption band at 6.8 eV. The 2.0 eV band was attributed to transition from the sigma bond between Si and dangling oxygen to nonbonding pi orbital on the dangling oxygen. The uniquely small electron-phonon coupling associated with the 2.0 eV transition is explained by stabilization of Si-O bond in the excited state by hyperconjugation effects.