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Masami Terauchi

Publications and source records attributed to Masami Terauchi.

9 recordsLinked to original sources
PubMed2006

High energy-resolution electron energy-loss spectroscopy study of the electric structure of double-walled carbon nanotubes.

Electron energy-loss spectra were obtained from two double-walled carbon nanotubes (DWCNTs) with an energy resolution of 85 meV. The spectra showed multiple peak structures between 2 and 3 eV. However, peak positions are different for these two DWCNTs. The chiral indices of CNT layers of the two DWCNTs were determined to be (29,4)(in) (17,8)(out) and (46,6)(out) (26,21)(in), respectively, by comparing experimental electron diffraction patterns with simulated ones. The spectra were also compared with simulated joint density of states, which were derived from the determined chiral indices. It was confirmed that the peak structures in the spectra are due to interband transitions intrinsic for tubular structures of graphitic sheets.

Journal Article↗
PubMed2006

Soft-X-ray emission spectroscopy based on TEM-Toward a total electronic structure analysis.

The construction and basic performances of wavelength-dispersive soft-X-ray emission spectroscopy (SXES) devices attached to a transmission electron microscope were presented. An energy resolution of 0.23 eV was obtained at the aluminum L-emission energy. A Cu L-emission spectrum obtained showed four L-emission lines of Lalpha, Lbeta, Ll and Leta. Angle-resolved measurements of boron K-emission spectra of hexagonal-BN (h-BN) were presented. It clearly showed anisotropic emission intensity of the transition from pi-bonding state to 1s core hole. B K-emission spectra of h- and cubic-BNs showed a difference in energy positions of sigma-bonding peaks. An electron energy-loss spectrum of B K-edge and a B K-emission spectrum of cubic-BN were compared with a result of a LDA band calculation. It showed that high symmetry points in the band diagram appeared as peak and/or shoulder structures in those spectra. Interband transitions appeared in the imaginary part of the dielectric function of cubic-BN experimentally obtained were assigned in the band diagram. These results demonstrated a method to analyze the entire electronic structure of materials in the nanoscale using high energy-resolution spectroscopy methods based on transmission electron microscopy.

Journal Article↗
PubMed2006

Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction.

All the six lattice parameters (a, b, c, alpha, beta and gamma) of a Si (001) layer grown on a sapphire (1102) substrate were determined by convergent-beam electron diffraction with no assumption of crystal lattice symmetry. A lattice compression in the Si (001) plane and an elongation in the [001] direction were revealed. An anisotropic lattice compression in the (001) plane was clearly detected for the first time. That is, the lattice compression in the Si [100] direction, which is parallel to the sapphire [1101] direction, was larger than that of the Si [010] direction, which is parallel to the sapphire [1120] direction. It was also revealed that the lattice parameters of the Si-layer depend on the distance from the interface. Anisotropy of carrier mobility was reasonably explained in terms of the anisotropy of the lattice parameters determined.

Journal Article↗
PubMed2004

Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED.

All the six lattice parameters (a, b, c, alpha, beta and gamma) of a strained area of an InAs layer grown on a GaAs substrate were determined without any assumption of the crystal lattice symmetry from the higher-order Laue zone (HOLZ) lines appearing in one convergent-beam electron diffraction (CBED) pattern. The analysis was performed with three steps. Firstly, the parameters alpha and beta were determined from the deviations of the HOLZ lines from the mirror symmetry perpendicular to the [001] direction. Secondly, the parameter c was determined from the distance between the intersections of the HOLZ lines, which have the same h and k indices but different l indices. Finally, the parameters a, b and gamma were determined simultaneously from several distances between the intersections of the HOLZ lines. The lattice parameters determined for the strained area were a = 0.611(2) nm, b = 0.615(1) nm, c = 0.6119(7) nm, alpha = 89.5(1) degrees, beta = 89.0(2) degrees and gamma = 89.1(2) degrees. This result implies that the cubic lattice of InAs is elongated approximately in the [111] direction and the exact lattice symmetry is triclinic. The same analysis procedure was applied to another two specimen areas. It was found that the areas have orthorhombic distortions with lattice parameters a = 0.607(2) nm, b = 0.604(1) nm and c = 0.6085(7) nm for one area, and with a = 0.607(2) nm, b = 0.605(1) nm and c = 0.6065(7) nm for the other area. It is should be emphasized that the present analysis of lattice distortions is immediately applicable to the other semiconductors, such as Si, SiGe or GaAs layers, without assuming any crystal system.

Arsenicals↗
PubMed2004

Lattice parameter determination of a composition controlled Si1-x Gex layer on a Si (001) substrate using convergent-beam electron diffraction.

The six lattice parameters (a, b, c, alpha, beta and gamma) of Si(1-x)Ge(x), which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of crystal lattice symmetry. It was revealed that the lattice parameter c of Si(1-x)Ge(x) varies linearly with the Ge concentration and that the lattice symmetry is lowered from cubic to tetragonal, excluding an artifact due to the thinning of the specimen. The effect of strain relaxation that is caused by thinning specimens is discussed. Ge concentrations of examined specimen areas are evaluated using the obtained lattice parameters.

Crystallography↗
PubMed2004

High energy-resolution electron energy-loss spectroscopy study of the electronic structures of Li- and Mg-doped alpha-rhombohedral boron.

Electron-doped alpha-rhombohedral boron (alpha-r-B) crystals were synthesized by Li- and Mg-dopings. The doped alpha-r-B particles showed a shiny metallic colour, though non-doped alpha-r-B crystals showed a dark red colour (red boron). The electronic structures of doped alpha-r-B single crystals were examined by a high energy-resolution electron energy-loss spectroscopy microscope. Boron 1s electron-excitation spectra, which show the density of states of the conduction bands, of Li-doped alpha-r-B showed a chemical shift toward a smaller binding-energy side, indicating a charge transfer from the doped atoms to alpha-r-B. These spectra also showed a sharp intensity increase at the onset with a width of an energy resolution of the experiment. The sharp intensity increase may be assigned to a Fermi edge produced by the electron doping. The spectra of Mg-doped alpha-r-B showed a chemical shift indicating an electron doping, but did not show the presence of a Fermi edge.

Boron↗
PubMed2003

Detection of characteristic signals from as-doped (<1 at.%) regions of silicon by transmission electron microscopy and convergent-beam electron diffraction.

Characteristic signals were detected from As-doped (< 1 at.%) regions of silicon by dark-field transmission electron microscopy and convergent-beam electron diffraction. A slight intensity increase was observed in 220 dark-field images, which may be explained by an increase of scattering amplitude due to the As doping. The doped region showed a much higher intensity in 004 dark-field images. The characteristic high intensity was observed for specimens with As concentrations of about 0.09-0.8 at.%. Convergent-beam electron diffraction patterns obtained from the As-doped region showed a characteristic rocking curve for 004 reflection. These characteristics should originate from incoherent elastically scattered electrons due to a static lattice distortion around the doped As atoms. The observed characteristics in dark-field images and rocking curves of the 004 reflection should be a good probe not only for investigating the concentration of doped atoms in Si lattice, but also for the amount of impurity and/or point defects in other crystalline materials.

Journal Article↗
PubMed2002

Sarcoidosis breaching the fascia and mimicking a sarcoma.

A 55-year-old woman complained of a subcutaneous mass in her left buttock. MR images revealed an ill-defined soft tissue mass that crossed the fascia of the gluteus maximus muscle. Some surrounding edema was noted. The lesion showed some contrast uptake after administration of Gd-DTPA. An excisional biopsy revealed sarcoidosis involving both the muscle and subcutaneous tissue across the fascia, mimicking a sarcoma.

Buttocks↗