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Michael Lefenfeld

Publications and source records attributed to Michael Lefenfeld.

5 recordsLinked to original sources

Chemoresponsive monolayer transistors.

This work details a method to make efficacious field-effect transistors from monolayers of polycyclic aromatic hydrocarbons that are able to sense and respond to their chemical environment. The molecules used in this study are functionalized so that they assemble laterally into columns and attach themselves to the silicon oxide surface of a silicon wafer. To measure the electrical properties of these monolayers, we use ultrasmall point contacts that are separated by only a few nanometers as the source and drain electrodes. These contacts are formed through an oxidative cutting of an individual metallic single-walled carbon nanotube that is held between macroscopic metal leads. The molecules assemble in the gap and form transistors with large current modulation and high gate efficiency. Because these devices are formed from an individual stack of molecules, their electrical properties change significantly when exposed to electron-deficient molecules such as tetracyanoquinodimethane (TCNQ), forming the basis for new types of environmental and molecular sensors.

Biosensing Techniques↗

Direct structural observation of a molecular junction by high-energy x-ray reflectometry.

We report a direct angstrom resolution measurement of the structure of a molecular-size electronic junction comprising a single (or a double) layer of alkyl-thiol and alkyl-silane molecules at the buried interface between solid silicon and liquid mercury. The high-energy synchrotron x-ray measurements reveal densely packed layers comprising roughly interface-normal molecules. The monolayer's thickness is found to be 3-4 A larger than that of similar layers at the free surfaces of both mercury and silicon. The origins of this and the other unusual features detected are discussed in this article. Measurements of the bilayer junction with an applied potential did not show visible changes in the surface normal structure.

Journal Article↗

Organization of acenes with a cruciform assembly motif.

This study explores the assembly in the crystalline state of a class of pentacenes that are substituted along their long edges with aromatic rings forming rigid, cruciform molecules. The crystals were grown from the gas phase, and their structures were compared with DFT-optimized geometries. Both crystallographic and computed structures show that a planar acene core is the exception rather than the rule. In the assembly of these molecules, the phenyl groups block the herringbone motif and further guide the arrangement of the acene core into higher order structures. The packing for the phenyl-substituted derivatives is dictated by close contacts between the C-H's of the pendant aromatic rings and the carbons at the fusions in the acene backbone. Using thiophene substituents instead of phenyls creates cofacially stacked acenes. In thin films, the thiophene-substituted derivative forms devices with good electrical properties: relatively high mobility, high ON/OFF ratios, and low threshold voltage for device activation. An unusual result is obtained for the decaphenyl pentacene when devices are fabricated on its crystalline surface. Although its acene cores are well isolated from each other, this material still exhibits good electrical properties.

Journal Article↗

Alkali metals plus silica gel: powerful reducing agents and convenient hydrogen sources.

Alkali metals absorbed into silica gel yield three stages of unique loose black powders (M-SG) that are strong reducing agents. All react nearly quantitatively with water to form hydrogen. Liquid Na-K alloys form air-sensitive powders at room temperature that can be converted at 150 degrees C to a form that is sensitive to moisture but not to dry air. Slowly heating sodium and silica gel to 400 degrees C yields a third type that can be handled in ambient air with only slow degradation by atmospheric moisture. These materials eliminate many hazards associated with pure alkali metals and provide easily handled reducing agents and hydrogen sources. They could be used in continuous-flow reactors to reduce and protonate aromatics, dechlorinate alkyl and aryl halides, and desulfurize various compounds.

Journal Article↗

Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements.

The synthesis of a new series of mixed phenylene-thiophene oligomers is reported; 2,5-bis(4-n-hexylphenyl)thiophene (dH-PTP, 1), 5,5'-bis(4-n-hexylphenyl)-2,2'-bithiophene (dH-PTTP, 2), 5,5' '-bis(4-n-hexylphenyl)-2,2':5',2' '-terthiophene (dH-PT(3)P, 3), 5,5' "-bis(4-n-hexylphenyl)-2,2':5',2' ':5' ',2' "-quaterthiophene (dH-PT(4)P, 4), 1,4-bis[5-(4-n-hexylphenyl)-2-thienyl]benzene (dH-PTPTP, 5), and 2,5-bis[4(4'-n-hexylphenyl)phenyl]thiophene (dH-PPTPP, 6) were characterized by (1)H NMR, elemental analysis, UV-visible spectroscopy, differential scanning calorimetry, and thermogravimetric analysis. Vacuum-evaporated and solution-cast films were characterized by X-ray diffraction and scanning electron microscopy. All compounds display high p-type carrier mobilities as evaporated (up to 0.09 cm(2)/Vs) and as solution-cast (up to 0.03 cm(2)/Vs) films on both Si/SiO(2) and ITO/GR (glass resin) substrates. The straightforwardly synthesized dH-PTTP (2) displays an unprecedented combination of mobility, on/off ratio, stability, and processability. Both dH-PTTP (2) and dH-PPTPP (6) display a reversible, tunable, and stable memory effect even as solution-cast devices, with turn-on characteristics shifting from accumulation mode to zero or depletion mode after a writing voltage V(w) is applied. The charge storage is distributed over the gate dielectric structure and is concentrated near the dielectric-semiconductor interface, as evidenced by the response of "floating gate" configuration devices. Simple nonvolatile elements have been fabricated by solution-only techniques on ITO substrates using spin-coated glass resin, solution-cast oligomeric semiconductors, and painted graphite paste electrodes.

Journal Article↗