Biomedical subjects

Michiyoshi Tanaka

Publications and source records attributed to Michiyoshi Tanaka.

6 recordsLinked to original sources

PubMed2006

Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction.

All the six lattice parameters (a, b, c, alpha, beta and gamma) of a Si (001) layer grown on a sapphire (1102) substrate were determined by convergent-beam electron diffraction with no assumption of crystal lattice symmetry. A lattice compression in the Si (001) plane and an elongation in the [001] direction were revealed. An anisotropic lattice compression in the (001) plane was clearly detected for the first time. That is, the lattice compression in the Si [100] direction, which is parallel to the sapphire [1101] direction, was larger than that of the Si [010] direction, which is parallel to the sapphire [1120] direction. It was also revealed that the lattice parameters of the Si-layer depend on the distance from the interface. Anisotropy of carrier mobility was reasonably explained in terms of the anisotropy of the lattice parameters determined.

Journal Article↗

PubMed2004

Refinement of the crystal structural parameters of the intermediate phase of h-BaTiO3 using convergent-beam electron diffraction.

Crystal structural parameters (21 positional parameters and nine isotropic Debye-Waller factors) of the intermediate phase of hexagonal barium titanate (h-BaTiO3) have been refined by a structure analysis method using convergent-beam electron diffraction (CBED); this method was developed by Tsuda & Tanaka [Acta Cryst. (1999), A55, 939-954]. In order to perform the analysis, a parallel computation using a computer cluster composed of 16 connected Pentium 4 PCs was introduced. A function of parallel computation has been implemented in our analysis software, MBFIT, with the aid of the Message Passing Interface (MPI). Parallel computation enabled the present refinement to be conducted using a [001] CBED pattern and a [010] CBED pattern simultaneously. Reliable errors for the refined structural parameters have been obtained from the analyses of four independent experimental data sets instead of using the errors obtained by the error-propagation rule of least-squares fitting. The parameters obtained have been found to agree well with those determined by a neutron Rietveld analysis.

Journal Article↗

PubMed2004

Lattice parameter determination of a strained area of an InAs layer on a GaAs substrate using CBED.

All the six lattice parameters (a, b, c, alpha, beta and gamma) of a strained area of an InAs layer grown on a GaAs substrate were determined without any assumption of the crystal lattice symmetry from the higher-order Laue zone (HOLZ) lines appearing in one convergent-beam electron diffraction (CBED) pattern. The analysis was performed with three steps. Firstly, the parameters alpha and beta were determined from the deviations of the HOLZ lines from the mirror symmetry perpendicular to the [001] direction. Secondly, the parameter c was determined from the distance between the intersections of the HOLZ lines, which have the same h and k indices but different l indices. Finally, the parameters a, b and gamma were determined simultaneously from several distances between the intersections of the HOLZ lines. The lattice parameters determined for the strained area were a = 0.611(2) nm, b = 0.615(1) nm, c = 0.6119(7) nm, alpha = 89.5(1) degrees, beta = 89.0(2) degrees and gamma = 89.1(2) degrees. This result implies that the cubic lattice of InAs is elongated approximately in the [111] direction and the exact lattice symmetry is triclinic. The same analysis procedure was applied to another two specimen areas. It was found that the areas have orthorhombic distortions with lattice parameters a = 0.607(2) nm, b = 0.604(1) nm and c = 0.6085(7) nm for one area, and with a = 0.607(2) nm, b = 0.605(1) nm and c = 0.6065(7) nm for the other area. It is should be emphasized that the present analysis of lattice distortions is immediately applicable to the other semiconductors, such as Si, SiGe or GaAs layers, without assuming any crystal system.

Arsenicals↗

PubMed2004

Lattice parameter determination of a composition controlled Si1-x Gex layer on a Si (001) substrate using convergent-beam electron diffraction.

The six lattice parameters (a, b, c, alpha, beta and gamma) of Si(1-x)Ge(x), which was grown epitaxially on a Si (001) substrate with a varying Ge concentration, were determined by convergent-beam electron diffraction (CBED) without any assumption of crystal lattice symmetry. It was revealed that the lattice parameter c of Si(1-x)Ge(x) varies linearly with the Ge concentration and that the lattice symmetry is lowered from cubic to tetragonal, excluding an artifact due to the thinning of the specimen. The effect of strain relaxation that is caused by thinning specimens is discussed. Ge concentrations of examined specimen areas are evaluated using the obtained lattice parameters.

Crystallography↗

PubMed2002

Refinement of crystal structural parameters and charge density using convergent-beam electron diffraction--the rhombohedral phase of LaCrO3.

Atom positions and anisotropic Debye-Waller factors of the rhombohedral phase of LaCrO(3) have been refined simultaneously with the low-order structure factors, using a structure-analysis method of convergent-beam electron diffraction (CBED) proposed by Tsuda & Tanaka [Acta Cryst. (1999), A55, 939-954]. The method is based on the least-squares fitting between full dynamical calculations and energy-filtered intensities of two-dimensional higher-order Laue-zone (HOLZ) and zeroth-order Laue-zone (ZOLZ) CBED patterns. The positions of the oxygen atoms have been determined with a high precision. Clear anisotropy of the thermal vibrations of the oxygen atoms has been successfully determined by the CBED method for the first time. The charge transfer from the La and Cr atoms to the O atoms has been found from the deformation charge-density map.

Journal Article↗

PubMed2002

Simulations of Kikuchi patterns due to thermal diffuse scattering on MgO crystals.

Inelastic scattering of fast transmission electrons from a perfect crystal is investigated using the Bloch wave theory. A comprehensive expression for the scattering of electrons is given, which includes both elastic and inelastic multiple scatterings. This expression is an extended form of Fujimoto's expression for elastic scattering (J. Phys. Soc. Japan 14:1558 (1959)). For the approximation of single inelastic scattering, the expression becomes equivalent to the formula of Rez et al. (Phil. Mag. 35: 81 (1977)). When thermal diffuse scattering (TDS) is considered using the Einstein model or the scattering factor for TDS given by Hall and Hirsch (Proc. R. Soc. A 286: 158 (1965)), Rossouw and Bursill's expression (Acta Cryst. A 41: 320 (1985)) is derived. This expression has been used in computer simulations of TDS intensity distribution (Kikuchi pattern). It is shown that the simulations for magnesium oxide (MgO) using 357 beams agree quite well with the experimental ones.

Journal Article↗