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N Ikarashi

Publications and source records attributed to N Ikarashi.

5 recordsLinked to original sources

Higher-order Laue zone line contrast in large-angle convergent-beam electron diffraction around a dislocation.

The physical picture of higher-order Laue zone (HOLZ) line contrast in a large-angle convergent-beam electron diffraction pattern around a dislocation, which is used for determining the Burgers vector, was examined. To evaluate the analytical expression of diffracted wave amplitude, we introduced an approximate form of the atomic displacement field of a dislocation. We showed that the four features of the HOLZ line contrast, that is, splitting, fading, bending and periodical contrast can be explained by analysis of the atomic displacement field. The localized lattice plane bending around a dislocation core made a HOLZ line split, fade and bend. However, we found that the periodical contrast of a HOLZ line was produced by the change of phase difference of the atomic displacement field between the crystals above and below the slip plane across the dislocation line.

Journal Article↗

(110) HREM of interfacial structures in semiconductor hetero-structures.

We have established a (110) cross-sectional high-resolution transmission electron microscopy (HREM) method to observe atomic structures of semiconductor hetero-interfaces. We show theoretically that the semiconductors in a hetero-structure exhibit strong contrast for an EM specimen thickness near their extinction distances, allowing atomic-scale observations of the interfacial structures between them. Furthermore, to obtain a clear HREM image, an EM specimen preparation technique is developed in which chemical etching is used to remove ion milling artifacts. This HREM method allows edge-on imaging of interfaces formed along the (110) direction; observations of atomic steps at AlAs/GaAs interfaces and a chemically ordered structure at Si/Ge interfaces are demonstrated.

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