Structural model for the metal-induced Si(111)3 x 1 reconstruction.
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Biomedical subjects
NJ DiNardo
Publications and source records attributed to NJ DiNardo.
Electronic band structure of the two-dimensional surface-state bands of the (1 x 1) and (1 x 2) phases of Bi/GaSb(110).
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Electron correlation, metallization, and Fermi-level pinning at ultrathin K/Si(111) interfaces.
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K/GaAs(110) interface: Initial stages of growth and the semiconductor-to-metal transition.
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Occupied surface-state bands of Bi(1 x 1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy.
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Potassium-induced unrelaxation of the GaAs(110) surface.
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Semiconductor-to-metal transition in an ultrathin interface: Cs/GaAs(110).
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Comment on "Schottky-barrier formation at low metal coverages: A consistent molecular-orbital calculation for K on GaAs(110)"
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Cs-induced surface state on GaAs(110).
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Polarization dependence of Si(111)-2 x 1 surface-phonon and surface-state excitations.
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Photoemission-based photovoltage probe of semiconductor surface and interface electronic structure.
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Temperature-dependent electronic excitations of the Si(111)2 x 1 surface.
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H2O-derived contamination of cleaved Si(111)-2 x 1 surfaces.
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