Migration of the H2* complex and its relation to H- in n-type silicon.
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Biomedical subjects
NM Johnson
Publications and source records attributed to NM Johnson.
Impurity incorporation and doping efficiency in a-Si:H.
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Negative-charge state of hydrogen in silicon.
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Electrical and optical characterization of metastable deep-level defects in GaAs.
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Optical and electrical studies of interface traps in the Si/SiO2 system by modified junction space-charge techniques.
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Pressure dependence of the Pb center at the <111> Si/SiO2 interface.
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Hydrogen immobilization in silicon p-n junctions.
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Johnson, Herring, and Chadi reply.
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Structure of the boron-hydrogen complex in crystalline silicon.
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Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon.
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Hydrogen passivation of shallow-acceptor impurities in p-type GaAs.
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Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon.
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Identification of deep-gap states in a-Si:H by photo- depopulation-induced electron-spin resonance.
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Optical spectroscopy of the trivalent silicon defect at the Si-SiO2 interface.
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