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Nathan S Lewis

Publications and source records attributed to Nathan S Lewis.

At least 19 recordsLinked to original sources
PubMed2006

Comparison of the self-exchange and interfacial charge-transfer rate constants for methyl- versus tert-butyl-substituted Os(III) polypyridyl complexes.

Differences in the self-exchange and interfacial electron-transfer rate constants have been evaluated for a relatively unhindered Os(III/II) redox system, osmium(III/II) tris(4,4'-di-methyl-2,2'-bipyridyl), [Os(Me2bpy)3]3+/2+, relative to those of a relatively hindered system, osmium(III/II) tris(4,4'-di-tert-butyl-2,2'-bipyridyl), [Os(t-Bu2bpy)3]3+/2+. In contrast to the predicted increase in rate constant by a factor of 2-3 due to the difference in reorganization energy of the two complexes, introduction of the tert-butyl functionality decreased the self-exchange rate constant, as measured by NMR line-broadening techniques, by a factor of approximately 50 as compared to that of the analogous methyl-substituted osmium complex. Steady-state current density versus potential measurements, in conjunction with differential capacitance versus potential measurements, were used to compare the interfacial electron-transfer rate constants at n-type ZnO electrodes of [Os(t-Bu2bpy)3]3+/2+ and [Os(Me2bpy)3]3+/2+. The interfacial electron-transfer rate constant for the reduction of [Os(t-Bu2bpy)3]3+ was 100 times smaller than that for [Os(Me2bpy)3]3+. The results indicate that the tert-butyl group can act as a spacer on an outer-sphere redox couple and significantly decrease the electronic coupling of the electron-transfer reaction in both self-exchange and interfacial electron-transfer processes.

Journal Article↗
PubMed2006

Scanning tunneling microscopy of ethylated Si(111) surfaces prepared by a chlorination/alkylation process.

Scanning tunneling microscopy (STM) and computational modeling have been used to study the structure of ethyl-terminated Si(111) surfaces. The ethyl-terminated surface was prepared by treating the H-terminated Si(111) surface with PCl5 to form a Cl-terminated Si(111) surface with subsequent exposure to C(2)H(5)MgCl in tetrahydrofuran to produce an alkylated Si(111) surface. The STM data at 77 K revealed local, close-packed, and relatively ordered regions with a nearest-neighbor spacing of 0.38 nm as well as disordered regions. The average spot density corresponded to approximately 85% of the density of Si atop sites on an unreconstructed Si(111) surface. Molecular dynamics simulations of a Si(111) surface randomly populated with ethyl groups to a total coverage of approximately 80% confirmed that the ethyl-terminated Si(111) surface, in theory, can assume reasonable packing arrangements to accommodate such a high surface coverage, which could be produced by an exoergic surface functionalization route such as the two-step chlorination/alkylation process. Hence, it is possible to consistently interpret the STM data within a model suggested by recent X-ray photoelectron spectroscopic data and infrared absorption data, which indicate that the two-step halogenation/alkylation method can provide a relatively high coverage of ethyl groups on Si(111) surfaces.

Journal Article↗
PubMed2006

High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces.

High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si(+), Si(2+), Si(3+), and Si(4+) were detected on the Cl-terminated surface, with the highest oxidation state (Si(4+)) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p(3/2) peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monoleyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH(3)-, C(2)H(5)-, or C(6)H(5)CH(2)-terminated Si surfaces displayed <0.4 ML of surface oxide, and in most cases only displayed approximately 0.20 ML of oxide. This oxide was principally composed of Si(+) and Si(3+) species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p(3/2) peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7 degrees vs < or =0.5 degrees off of the (111) surface orientation) yielded no increase in the rate of oxidation nor change in binding energy of the resultant oxide that formed on the alkylated Si surfaces. Scanning Auger microscopy indicated that the alkylated surfaces formed oxide in isolated, inhomogeneous patches on the surface.

Journal Article↗
PubMed2006

Control of the stability, electron-transfer kinetics, and pH-dependent energetics of Si/H2O interfaces through methyl termination of Si(111) surfaces.

Methyl-terminated, n-type, (111)-oriented Si surfaces were prepared via a two-step chlorination-alkylation method. This surface modification passivated the Si surface toward electrochemical oxidation and thereby allowed measurements of interfacial electron-transfer processes in contact with aqueous solutions. The resulting semiconductor/liquid junctions exhibited interfacial kinetics behavior in accord with the ideal model of a semiconductor/liquid junction. In contrast to the behavior of H-terminated Si(111) surfaces, current density vs. potential measurements of CH(3)-terminated Si(111) surfaces in contact with an electron acceptor having a pH-independent redox potential (methyl viologen(2+/+)) were used to verify that the band edges of the modified Si electrode were fixed with respect to changes in solution pH. The results provide strong evidence that the energetics of chemically modified Si interfaces can be fixed with respect to pH and show that the band-edge energies of Si can be tuned independently of pH-derived variations in the electrochemical potential of the solution redox species.

Letter↗
PubMed2006

Infrared spectroscopic investigation of the reaction of hydrogen-terminated, (111)-oriented, silicon surfaces with liquid methanol.

Fourier transform infrared spectroscopy and first principles calculations have been used to investigate the reaction of atomically smooth, hydrogen-terminated Si(111) (H-Si) surfaces with anhydrous liquid methanol. After 10 min of reaction at room temperature, a sharp absorbance feature was apparent at approximately 1080 cm(-1) that was polarized normal to the surface plane. Previous reports have identified this mode as a Si-O-C stretch; however, the first principles calculations, presented in this work, indicate that this mode is a combination of an O-C stretch with a CH3 rock. At longer reaction times, the intensity of the Si-H stretching mode decreased, while peaks attributable to the O-C coupled stretch and the CH3 stretching modes, respectively, increased in intensity. Spectra of H-Si(111) surfaces that had reacted with CD3OD showed the appearance of Si-D signals polarized normal to the surface as well as the appearance of vibrations indicative of Si-OCD3 surface species. The data are consistent with two surface reactions occurring in parallel, involving (a) chemical attack of hydrogen-terminated Si(111) terraces by CH3OH, forming Si-OCH3 moieties having their Si-O bond oriented normal to the Si(111) surface and (b) transfer of the acidic hydrogen of the methanol to the silicon surface, either through a direct H-to-D exchange mechanism or through a mechanism involving chemical step-flow etching of Si-H step sites.

Journal Article↗
PubMed2006

Powering the planet: chemical challenges in solar energy utilization.

Global energy consumption is projected to increase, even in the face of substantial declines in energy intensity, at least 2-fold by midcentury relative to the present because of population and economic growth. This demand could be met, in principle, from fossil energy resources, particularly coal. However, the cumulative nature of CO(2) emissions in the atmosphere demands that holding atmospheric CO(2) levels to even twice their preanthropogenic values by midcentury will require invention, development, and deployment of schemes for carbon-neutral energy production on a scale commensurate with, or larger than, the entire present-day energy supply from all sources combined. Among renewable energy resources, solar energy is by far the largest exploitable resource, providing more energy in 1 hour to the earth than all of the energy consumed by humans in an entire year. In view of the intermittency of insolation, if solar energy is to be a major primary energy source, it must be stored and dispatched on demand to the end user. An especially attractive approach is to store solar-converted energy in the form of chemical bonds, i.e., in a photosynthetic process at a year-round average efficiency significantly higher than current plants or algae, to reduce land-area requirements. Scientific challenges involved with this process include schemes to capture and convert solar energy and then store the energy in the form of chemical bonds, producing oxygen from water and a reduced fuel such as hydrogen, methane, methanol, or other hydrocarbon species.

Carbon↗
PubMed2006

A comparison between interfacial electron-transfer rate constants at metallic and graphite electrodes.

The Fermi golden rule formalism has been used to derive the rate constant for interfacial electron transfer from a semimetallic electrode, such as highly ordered pyrolytic graphite (HOPG), to a redox couple in solution. A simple expression is presented that semiquantitatively relates the electron-transfer rate constant at a semimetallic electrode to that at a metallic electrode. The approach allows for the estimation of the value of the rate constant for interfacial charge transfer to nonadsorbing outer-sphere redox species at semimetallic electrodes. Rate constants for interfacial electron transfer for a variety of one-electron redox couples at semimetallic electrodes have been calculated relative to the rate constant of the ferrocenium/ferrocene redox couple at a gold electrode. Good agreement is found, in general, between the calculated and observed rate constants.

Journal Article↗
PubMed2006

Cyclometalated iridium(III)-sensitized titanium dioxide solar cells.

Ir(III) dyes used as sensitizers in dye-sensitized solar cells produced quantum yields approaching unity for conversion of absorbed photons to current under simulated air mass 1.0 sunlight, with current production resulting from ligand-to-ligand charge-transfer states, rather than the typical metal-to-ligand charge-transfer states in ruthenium-based cells.

Journal Article↗
PubMed2006

Vapor sensing using polymer/carbon black composites in the percolative conduction regime.

To investigate the behavior of chemiresistive vapor sensors operating below or around the percolation threshold, chemiresistors have been formed from composites of insulating organic polymers and low mass fractions of conductive carbon black (CB, 1-12% w/w). Such sensors produced extremely large relative differential resistance changes above certain threshold vapor concentrations. At high analyte partial pressures, these sensors exhibited better signal/noise characteristics and were typically less mutually correlated in their vapor response properties than composites formed using higher mass fractions of CB in the same set of polymer sorption layers. The responses of the low-mass-fraction CB sensors were, however, less repeatable, and their nonlinear response as a function of analyte concentration required more complicated calibration schemes to identify and quantify analyte vapors to compensate for drift of a sensor array and to compensate for variability in response between sensor arrays. Because of their much larger response signals, the low-mass-fraction CB sensors might be especially well suited for use with low-precision analog-to-digital signal readout electronics. These sensors serve well as a complement to composites formed from higher mass fractions of CB and have yielded insight into the tradeoffs of signal-to-noise improvements vs complexity of signal processing algorithms necessitated by the use of nonlinearly responding detectors in array-based sensing schemes.

Polymers↗
PubMed2006

High-resolution X-ray photoelectron spectroscopy of chlorine-terminated GaAs(111)A surfaces.

Oxide-terminated and Cl-terminated GaAs(111)A surfaces have been characterized in the As and Ga 3d regions by high-resolution, soft X-ray photoelectron spectroscopy. The Cl-terminated surface, formed by treatment with 6 M HCl(aq), showed no detectable As oxides or As(0) in the As 3d region. The Ga 3d spectrum of the Cl-terminated surface showed a broad, intense signal at 19.4 eV and a smaller signal at 21.7 eV. The Ga 3d peaks were fitted using three species, one representing bulk GaAs and the others representing two chemical species on the surface. The large peak was well-fitted by the bulk GaAs emission and by a second doublet, assigned to surface Ga atoms bonded to Cl, that was shifted by 0.34 eV from the bulk GaAs 3d emission. The smaller peak, shifted by 2.3 eV in binding energy relative to the bulk GaAs Ga 3d signal, is assigned to Ga(OH)3. The data confirm that wet chemical etching allows for the formation of well-defined, Cl-terminated GaAs(111)A surfaces free of detectable elemental As, that can provide a starting point for further functionalization of GaAs.

Letter↗
PubMed2006

Covalent attachment of acetylene and methylacetylene functionality to Si(111) surfaces: scaffolds for organic surface functionalization while retaining Si-C passivation of Si(111) surface sites.

Si(111) surfaces have been functionalized with Si-CC-R species, where R = H or -CH3, using a two-step reaction sequence involving chlorination of H-Si(111) followed by treatment with Na-CC-H or CH3-CC-Na reagents. The resulting surfaces showed no detectable oxidation as evidenced by X-ray photoelectron spectroscopic (XPS) data in the Si 2p region, electrochemical measurements of Si-H oxidation, or infrared spectroscopy. The Si-CC-R-terminated surfaces exhibited a characteristic CC stretch in the infrared at 2179 cm-1, which was strongly polarized perpendicular to the Si(111) surface plane. XPS measurements in the C 1s region showed a low binding energy peak indicative of Si-C bonding, with a coverage that was, within experimental error, identical to that of the CH3-terminated Si(111) surface, which has been shown to fully terminate the Si atop sites on an unreconstructed Si(111) surface. The Si-CC-H-terminated surfaces were further functionalized by exposure to n-C4H9Li followed by exposure to para Br-C6H5-CF3, allowing for introduction of para -C6H5CF3 groups while maintaining the desirable chemical and electrical properties that accompany complete Si-C termination of the atop sites on the Si(111) surface.

Journal Article↗
PubMed2006

Chemical and electrical passivation of single-crystal silicon(100) surfaces through a two-step chlorination/alkylation process.

Single-crystal Si(100) surfaces have been functionalized by using a two-step radical chlorination-Grignard (R = MgCl, R = CH3, C2H5, C4H9, C6H5, or CH2C6H5) alkylation method. After alkylation, no chlorine was detectable on the surface by X-ray photoelectron spectroscopy (XPS), and the C 1s region showed a silicon-induced peak shift indicative of a Si-C bond. The relative intensity of this peak decreased, as expected, as the steric bulk of the alkyl increased. Despite the lack of full alkyl termination of the atop sites of the Si(100) surface, functionalization significantly reduced the rate of surface oxidation in air compared to that of the H-terminated Si(100) surface, with alkylated surfaces forming less than half a monolayer of oxide after over one month of exposure to air. Studies of the charge-carrier lifetime with rf photoconductivity decay methods indicated a surface recombination velocity of <30 cm s(-1) for methylated surfaces, and <60 cm s(-1) for Si surfaces functionalized with the other alkyl groups evaluated. Soft X-ray photoelectron spectroscopic data indicated that the H-Si(100) surfaces were terminated by SiH, SiH2, and SiH3 species, whereas Cl-Si(100) surfaces were predominantly terminated by monochloro (SiCl and SiHCl) and dichloro (SiCl2 and SiHCl2) Si species. Methylation produced signals consistent with termination by Si-alkyl bonding arising from SiH(CH3)-, SiH2(CH3)-, and Si(CH3)2-type species.

Journal Article↗
PubMed2006

Chemical and electrical passivation of silicon (111) surfaces through functionalization with sterically hindered alkyl groups.

Crystalline Si(111) surfaces have been alkylated in a two-step chlorination/alkylation process using sterically bulky alkyl groups such as (CH3)2CH- (iso-propyl), (CH3)3C- (tert-butyl), and C6H5- (phenyl) moieties. X-ray photoelectron spectroscopic (XPS) data in the C 1s region of such surfaces exhibited a low energy emission at 283.9 binding eV, consistent with carbon bonded to Si. The C 1s XPS data indicated that the alkyls were present at lower coverages than methyl groups on CH(3)-terminated Si(111) surfaces. Despite the lower alkyl group coverage, no Cl was detected after alkylation. Functionalization with the bulky alkyl groups effectively inhibited the oxidation of Si(111) surfaces in air and produced low (<100 cm s(-1)) surface recombination velocities. Transmission infrared spectroscopy indicated that the surfaces were partially H-terminated after the functionalization reaction. Application of a reducing potential, -2.5 V vs Ag+/Ag, to Cl-terminated Si(111) electrodes in tetrahydrofuran resulted in the complete elimination of Cl, as measured by XPS. The data are consistent with a mechanism in which the reaction of alkyl Grignard reagents with the Cl-terminated Si(111) surfaces involves electron transfer from the Grignard reagent to the Si, loss of chloride to solution, and subsequent reaction between the resultant silicon radical and alkyl radical to form a silicon-carbon bond. Sites sterically hindered by neighboring alkyl groups abstract a H atom to produce Si-H bonds on the surface.

Journal Article↗
PubMed2006

Quantum mechanics calculations of the thermodynamically controlled coverage and structure of alkyl monolayers on Si(111) surfaces.

The heat of formation, Delta E, for silicon (111) surfaces terminated with increasing densities of the alkyl groups CH3- (methyl), C2H5- (ethyl), (CH3)2CH- (isopropyl), (CH3)3C- (tert-butyl), CH3(CH2)5- (hexyl), CH3(CH2)7- (octyl), and C6H5- (phenyl) was calculated using quantum mechanics (QM) methods, with unalkylated sites being H-terminated. The free energy, Delta G, for the formation of both Si-C and Si-H bonds from Si-Cl model compounds was also calculated using QM, with four separate Si-H formation mechanisms proposed, to give overall Delta G(S) values for the formation of alkylated Si(111) surfaces through a two step chlorination/alkylation method. The data are in good agreement with measurements of the packing densities for alkylated surfaces formed through this technique, for Si-H free energies of formation, Delta G(H), corresponding to a reaction mechanism including the elimination of two H atoms and the formation of a C=C double bond in either unreacted alkyl Grignard groups or tetrahydrofuran solvent.

Journal Article↗
PubMed2006

Theoretical investigation of the structure and coverage of the Si(111)-OCH3 surface.

The surface structure, strain energy, and charge profile of the methoxylated Si(111) surface, Si(111)-OCH3, has been studied using quantum mechanics, and the results are compared to those obtained previously for Si(111)-CH3 and Si(111)-C2H5. The calculations indicate that 100% coverage is feasible for Si(111)-OCH3 (similar to the methylated surface), as compared to only approximately 80% coverage for the ethylated surface. These differences can be understood in terms of nearest-neighbor steric and electrostatic interactions. Enthalpy and free energy calculations indicate that the formation of the Si(111)-OCH3 surface from Si(111)-H and methanol is favorable at 300 K. The calculations have also indicated the conditions under which stacking faults can emerge on Si(111)-OCH3, and such conditions are contrasted with the behavior of Si(111)-CH3 and Si(111)-CH2CH3 surfaces, for which stacking faults are calculated to be energetically feasible when etch pits with sufficiently long edges are present on the surface.

Journal Article↗
PubMed2006

Optically directed molecular transport and 3D isoelectric positioning of amphoteric biomolecules.

We demonstrate the formation of charged molecular packets and their transport within optically created electrical force-field traps in a pH-buffered electrolyte. We call this process photoelectrophoretic localization and transport (PELT). The electrolyte is in contact with a photoconductive semiconductor electrode and a counterelectrode that are connected through an external circuit. A light beam directed to coordinates on the photoconductive electrode surface produces a photocurrent within the circuit and electrolyte. Within the electrolyte, the photocurrent creates localized force-field traps centered at the illuminated coordinates. Charged molecules, including polypeptides and proteins, electrophoretically accumulate into the traps and subsequently can be transported in the electrolyte by moving the traps over the photoconductive electrode in response to movement of the light beam. The molecules in a single trap can be divided into aliquots, and the aliquots can be directed along multiple routes simultaneously by using multiple light beams. This photoelectrophoretic transport of charged molecules by PELT resembles the electrostatic transport of electrons within force-field wells of solid-state charge-coupled devices. The molecules, however, travel in a liquid electrolyte rather than a solid. Furthermore, we have used PELT to position amphoteric biomolecules in three dimensions. A 3D pH gradient was created in an electrolyte medium by controlling the illumination position on a photoconductive anode where protons were generated electrolytically. Photoelectrophoretic transport of amphoteric molecules through the pH gradient resulted in accumulation of the molecules at their apparent 3D isoelectric coordinates in the medium.

Animals↗
PubMed2006

Transmission infrared spectroscopy of methyl- and ethyl-terminated silicon(111) surfaces.

Transmission infrared spectroscopy (TIRS) has been used to investigate the surface-bound species formed in the two-step chlorination/alkylation reaction of crystalline (111)-oriented Si surfaces. Spectra were obtained after hydrogen termination, chlorine termination, and reaction of the Cl-Si(111) surface with CH(3)MgX or C(2)H(5)MgX (X = Cl, Br) to form methyl (CH(3))- or ethyl (C(2)H(5))-terminated Si(111) surfaces, respectively. Freshly etched H-terminated Si(111) surfaces that were subsequently chlorinated by immersion in a saturated solution of PCl(5) in chlorobenzene were characterized by complete loss of the Si-H stretching and bending modes at 2083 and 627 cm(-1)(,) respectively, and the appearance of Si-Cl modes at 583 and 528 cm(-1). TIRS of the CH(3)-terminated Si(111) surface exhibited a peak at 1257 cm(-1) polarized perpendicular to the surface assigned to the C-H symmetrical bending, or "umbrella" motion, of the methyl group. A peak observed at 757 cm(-1) polarized parallel to the surface was assigned to the C-H rocking motion. Alkyl C-H stretch modes on both the CH(3)- and C(2)H(5)-terminated surfaces were observed near 2900 cm(-1). The C(2)H(5)-terminated Si(111) surface additionally exhibited broad bands at 2068 and 2080 cm(-1), respectively, polarized perpendicular to the surface, as well as peaks at 620 and 627 cm(-1), respectively, polarized parallel to the surface. These modes were assigned to the Si-H stretching and bending motions, respectively, resulting from H-termination of surface atoms that did not form Si-C bonds during the ethylation reaction.

Journal Article↗