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Ningsheng Xu

Publications and source records attributed to Ningsheng Xu.

7 recordsLinked to original sources

Growth of large-area aligned molybdenum nanowires by high temperature chemical vapor deposition: synthesis, growth mechanism, and device application.

Large-area aligned Mo nanowires have been grown on stainless steel substrates by high-temperature chemical vapor deposition with the use of Mo metal. The detailed physical and chemical growth processes regarding the formation of the nanowires have been investigated using mass spectroscopy, thermogravimetry, and differential scanning calorimetry analysis, as well as structure analysis by electron microscopy. In reference to Gibbs energy calculation, our study reveals that the growth relies on the decomposition of MoO2 vapors through condensation of its vapor at high substrate temperatures. The aligned growth is a result of competing growth with the nanowires normal to the substrate surface reaching the final growth front. The field emission measurement and the vacuum luminescent tube study show that the Mo nanowires have potential application as electron emitters.

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Hexagonal and prismatic nanowalled ZnO microboxes.

We hereby report hydrothermal syntheses of new microstructures of semiconducting ZnO. Single-crystalline prismatic ZnO microboxes formed by nanowalls and hexagonal hollow microdisks closed by plates with micron-sized inorganic fullerene-like structures have been made in a base-free medium through a one-step hydrothermal synthesis with the help of n-butanol (NB). Structures and morphologies of the products were confirmed by results from powder X-ray diffraction and scanning electron microscopy. NB has been found to play a crucial role in the growth of these hollow structures. It is indicated that these hollow ZnO crystals were grown from redissolution of interiors. These ZnO microboxes exhibit a band emission in the visible range, implying the possession of a high content of defects.

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Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire.

Utilizing the coupled piezoelectric and semiconducting dual properties of ZnO, we demonstrate a piezoelectric field effect transistor (PE-FET) that is composed of a ZnO nanowire (NW) (or nanobelt) bridging across two Ohmic contacts, in which the source to drain current is controlled by the bending of the NW. A possible mechanism for the PE-FET is suggested to be associated with the carrier trapping effect and the creation of a charge depletion zone under elastic deformatioin. This PE-FET has been applied as a force/pressure sensor for measuring forces in the nanonewton range and even smaller with the use of smaller NWs. An almost linear relationship between the bending force and the conductance was found at small bending regions, demonstrating the principle of nanowire-based nanoforce and nanopressure sensors.

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Vapor-solid growth and characterization of aluminum nitride nanocones.

Aluminum nitride nanostructures are attractive for many promising applications in semiconductor nanotechnology. Herein we report on vapor-solid growth of quasi-aligned aluminum nitride nanocones on catalyst-coated wafers via the reactions between AlCl3 vapor and NH3 gas under moderate temperatures around 700 degrees C, and the growth mechanism is briefly discussed. The as-prepared wurtzite aluminum nitride nanocones grow preferentially along the c-axis with adjustable dimensions of the sharp tips in the range of 20-60 nm. The photoluminescence spectrum reveals a broad blue emission band with a fine photon structure while the field emission study shows a notable emission current with a moderate turn-on field as expected, suggesting their potential applications in light and electron emission nanodevices.

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Quantum-mechanical investigation of field-emission mechanism of a micrometer-long single-walled carbon nanotube.

A quantum-mechanical simulation is carried out to investigate the charge distribution and electrostatic potential along a 1 microm long (5,5) single-walled carbon nanotube under realistic field-emission experimental conditions. A single layer of carbon atoms is found sufficient to shield most of the electric field except at the tip where strong field penetration occurs. The penetration leads to a nonlinear decrease of potential barrier for emission, which is equally responsible for the low threshold voltage besides the well-known geometrical field enhancement factor.

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Kinetically controlled synthesis of wurtzite ZnS nanorods through mild thermolysis of a covalent organic-inorganic network.

The high-temperature (over 1020 degrees C) polymorph of ZnS, wurtzite ZnS, has been successfully prepared through a low-temperature (180 degrees C) hydrothermal synthesis route in the presence of ethylenediamine (en). The effects of en concentrations, reactant concentrations, reaction temperatures, and reaction times on crystal structures and shapes of ZnS have been investigated. We have demonstrated that the wurtzite ZnS showing rodlike morphology can be kinetically stabilized in the presence of en, especially at a high reactant concentration under appropriate hydrothermal conditions. Besides phase evolution of ZnS from hexagonal to cubic, morphological transformation from nanorods to nanograins has also been observed in the present investigation. Nanograins of phase-pure cubic ZnS, the thermodynamically stable polymorph, are easily prepared, and no hexagonal ZnS nanorods are detected in "pure" water, i.e., in the absence of en molecules. The above investigations indicate that the controlled fabrication of wurtzite ZnS nanorods is due to a mediated generation of the lamellar phase, ZnS.0.5en, a covalent organic-inorganic network based on ZnS slabs, and to its subsequent thermolysis in aqueous solution. The controlled growth of wurtzite ZnS nanorods and sphalerite ZnS nanograins provides us an opportunity to structurally modulate physical properties. These wurtzite ZnS nanorods display narrower and stronger blue emission than sphalerite ZnS nanograins.

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