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Norihisa Oyama

Publications and source records attributed to Norihisa Oyama.

2 recordsLinked to original sources

Real-time propagation time-dependent density functional theory study on the ring-opening transformation of the photoexcited crystalline benzene.

Mechanism of the ring-opening transformation in the photoexcited crystalline benzene is investigated on the femtosecond scale by a computational method based on the real-time propagation (RTP) time-dependent density functional theory (TDDFT). The excited-state dynamics of the benzene molecule is also examined not only for the distinction between the intrinsic properties of molecule and the intermolecular interaction but for the first validation using the vibration frequencies for the RTP-TDDFT approach. It is found that the vibration frequencies of the excited and ground states in the molecule are well reproduced. This demonstrates that the present method of time evolution using the Suzuki-Trotter-type split operator technique starting with the Franck-Condon state approximated by the occupation change of the Kohn-Sham orbitals is adequately accurate. For the crystalline benzene, we carried out the RTP-TDDFT simulations for two typical pressures. At both pressures, large swing of the C-H bonds and subsequent twist of the carbon ring occurs, leading to tetrahedral (sp3-like) C-H bonding. The nu4 and nu16 out-of-plane vibration modes of the benzene molecule are found mostly responsible for these motions, which is different from the mechanism proposed for the thermal ring-opening transformation occurring at higher pressure. Comparing the results between different pressures, we conclude that a certain increase of the intermolecular interaction is necessary to make seeds of the ring opening (e.g., radical site formation and breaking of the molecular character) even with the photoexcitation, while the hydrogen migration to fix them requires more free volume, which is consistent with the experimental observation that the transformation substantially proceeds on the decompression.

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Migration processes of the 30 degrees partial dislocation in silicon.

The migration processes of the 30 degrees partial dislocation in silicon have been investigated using first-principles total-energy calculations. We have presented for the first time a reliable determination of the formation and migration energies of kinks, which are consistent with experiments. The obtained results indicate that the 30 degrees partial dominates the dislocation dynamics in Si and suggest the dislocation glide picture based on the no-collision model. We suggest that the interpretation of experimental studies on the dislocation dynamics should be reexamined in light of these results.

Journal Article↗