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O D Mücke

Publications and source records attributed to O D Mücke.

5 recordsLinked to original sources

Experimental implementation of optical clockwork without carrier-envelope phase control.

We demonstrate optical clockwork without the need for carrier-envelope phase control by use of sum-frequency generation between a continuous-wave optical parametric oscillator at 3.39 microm and a femtosecond mode-locked Ti:sapphire laser with two strong spectral peaks at 834 and 670 nm, a spectral difference matched by the 3.39-microm radiation.

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Light-induced gaps in semiconductor band-to-band transitions.

We observe a triplet around the third harmonic of the semiconductor band gap when exciting 50-100 nm thin GaAs films with 5 fs pulses at 3 x 10(12) W/cm(2). The comparison with solutions of the semiconductor Bloch equations allows us to interpret the observed peak structure as being due to a two-band Mollow triplet. This triplet in the optical spectrum is a result of light-induced gaps in the band structure, which arise from coherent band mixing. The theory is formulated for full tight-binding bands and uses no rotating-wave approximation.

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Evidence for third-harmonic generation in disguise of second-harmonic generation in extreme nonlinear optics.

In contrast with traditional nonlinear optics, a peak at the spectral position of the second harmonic of a laser can also be generated in an inversion-symmetric medium in the regime of extreme nonlinear optics. We describe the underlying mechanism of such third-harmonic generation in disguise of second-harmonic generation and compare theory with the optical as well as the radio-frequency spectra measured in recent experiments on thin ZnO films. The peak at twice the carrier-envelope offset frequency in the radio-frequency spectra is shown to be an unambiguous signature of such a process.

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Role of the carrier-envelope offset phase of few-cycle pulses in nonperturbative resonant nonlinear optics.

We study the influence of the carrier-envelope offset phase of few-cycle pulses on nonperturbative resonant extreme nonlinear optics in a semiconductor. If the Rabi frequency becomes comparable to the light frequency, the different Rabi sidebands interfere around twice the laser center frequency, giving rise to a signal which strongly depends on the carrier-envelope offset phase. This signature should be measurable in GaAs samples.

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Signatures of carrier-wave Rabi flopping in GaAs.

For excitation of the model semiconductor GaAs with optical pulses which are both extremely short ( 5 fs) and extremely intense ( approximately 10(12) W cm(-2)), we can meet the condition that the Rabi frequency becomes comparable to the band gap frequency-a highly unusual and previously inaccessible situation. Specifically, in this regime, we observe carrier-wave Rabi flopping, a novel effect of nonlinear optics which has been predicted theoretically and which is related to the failure of the area theorem.

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