Biomedical subjects

O G Okhotnikov

Publications and source records attributed to O G Okhotnikov.

4 recordsLinked to original sources

PubMed2003

Mode-locked ytterbium fiber laser tunable in the 980-1070-nm spectral range.

Spectral tuning of a mode-locked Yb-doped fiber laser over a 90-nm range is reported. Using semiconductor saturable absorber mirrors in a fiber laser cavity incorporating a grating-pair dispersive delay line, we obtain reliable self-starting mode locking over the whole tuning range. The wide tuning range is achieved by optimization of reflection characteristics and bandgap energy of the multiple-quantum-well semiconductor saturable absorber and by proper engineering of the laser cavity.

Journal Article↗

PubMed2003

Harmonic mode locking by synchronous optical pumping of a saturable absorber with the residual pump.

An actively mode-locked fiber laser is demonstrated, for the first time to our knowledge, by modulation of a saturable-absorber mirror with the light used simultaneously for pumping the gain fiber. Stabilization of a harmonically passive mode-locked fiber laser that generates soliton pulses of 550-fs duration is obtained with this technique. The results indicate a reduction of supermode suppression by more than 55 dB. The timing jitter is improved by 9 dB.

Journal Article↗

PubMed2003

1.5-microm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser.

We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-microm wavelength range.

Journal Article↗

PubMed2003

Vertical-cavity saturable-absorber intensity modulator.

We propose and demonstrate a reflection-type optical modulator, with surface-normal architecture, that exploits the optical saturation of absorption in semiconductor quantum wells. The modulation section of the modulator, which is composed of quantum wells placed within a Fabry-Perot cavity, is optically controlled by an intensity-modulated beam generated by an in-plane laser integrated monolithically on the same wafer and grown in a single epitaxial step. The modulation section and the in-plane laser share the same medium; therefore, efficient coupling between the control beam and the signal beam is achieved. The device was successfully used for active mode locking of an erbium-doped fiber laser.

Journal Article↗