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O G Schmidt

Publications and source records attributed to O G Schmidt.

13 recordsLinked to original sources
PubMed2006

Interplay between thermodynamics and kinetics in the capping of InAs/GaAs(001) quantum dots.

A microscopic picture for the GaAs overgrowth of self-organized quantum dots is developed. Scanning tunneling microscopy measurements reveal two capping regimes: the first being characterized by a dot shrinking and a backward pyramid-to-dome shape transition. This regime is governed by fast dynamics resulting in island morphologies close to thermodynamic equilibrium. The second regime is marked by a true overgrowth and is controlled by kinetically limited surface diffusion processes. A simple model is developed to describe the observed structural changes which are rationalized in terms of energetic minimization driven by lattice mismatch and alloying.

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PubMed2006

Dendrochronology of strain-relaxed islands.

We report on the observation and study of tree-ring structures below dislocated SiGe islands (superdomes) grown on Si(001) substrates. Analogous to the study of tree rings (dendrochronology), these footprints enable us to gain unambiguous information on the growth and evolution of superdomes and their neighboring islands. The temperature dependence of the critical volume for dislocation introduction is measured and related to the composition of the islands. We show clearly that island coalescence is the dominant pathway towards dislocation nucleation at low temperatures, while at higher temperatures anomalous coarsening is effective and leads to the formation of a depletion region around superdomes.

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PubMed2006

Local structure of a rolled-up single crystal: an X-ray microdiffraction study of individual semiconductor nanotubes.

Crystals with cylindrical symmetry, not existing in nature, are mimicked by the roll-up of single-crystalline and highly strained semiconductor bilayers. Exploiting this, the local structure of such individual rolled-up nanotubes is locally probed and quantified nondestructively by x-ray microbeam diffraction. A comparison to simulations, based on the minimization of the elastic energy, allows us to determine layer thicknesses and lattice parameter distributions within the strongly curved bilayers.

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PubMed2006

Quantum light emission of two lateral tunnel-coupled (In,Ga)As/GaAs quantum dots controlled by a tunable static electric field.

Lateral quantum coupling between two self-assembled (In,Ga)As quantum dots has been observed. Photon statistics measurements between the various excitonic and biexcitonic transitions of these lateral quantum dot molecules display strong antibunching confirming the presence of coupling. Furthermore, we observe an anomalous exciton Stark shift with respect to static electric field. A simple model indicates that the lateral coupling is due to electron tunneling between the dots when the ground states are in resonance. The electron probability can then be shifted to either dot and the system can be used to create a wavelength-tunable single-photon emitter by simply applying a voltage.

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PubMed2006

Giant anisotropy of Zeeman splitting of quantum confined acceptors in Si/Ge.

Shallow acceptor levels in Si/Ge/Si quantum well heterostructures are characterized by resonant-tunneling spectroscopy in the presence of high magnetic fields. In a perpendicular magnetic field we observe a linear Zeeman splitting of the acceptor levels. In an in-plane field, on the other hand, the Zeeman splitting is strongly suppressed. This anisotropic Zeeman splitting is shown to be a consequence of the huge light-hole--heavy-hole splitting caused by a large biaxial strain and a strong quantum confinement in the Ge quantum well.

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PubMed2005

Kinetic evolution and equilibrium morphology of strained islands.

Self-assembled SiGe islands grown on Si(001) leave behind characteristic "footprints" that reveal that small islands shrink, losing material to nearby larger islands. The critical size, dividing shrinking from growing islands, corresponds to the pyramid-to-dome shape transition, consistent with "anomalous coarsening" While shrinking, {105}-faceted pyramids transform into truncated pyramids and ultimately into unfaceted mounds. The similarity to behavior during island growth indicates that island shape and facet formation are thermodynamically determined.

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PubMed2005

Lateral motion of SiGe islands driven by surface-mediated alloying.

SiGe islands move laterally on a Si(001) substrate during in situ postgrowth annealing. This surprising behavior is revealed by an analysis of the substrate surface morphology after island removal using wet chemical etching. We explain the island motion by asymmetric surface-mediated alloying. Material leaves one side of the island by surface diffusion, and mixes with additional Si from the surrounding surface as it redeposits on the other side. Thus the island moves laterally while becoming larger and more dilute.

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PubMed2004

Material distribution across the interface of random and ordered island arrays.

We grow single and twofold stacked island layers on patterned substrates and investigate the material distribution in and around the patterned area. For both layers a pronounced material depletion region occurs outside the pattern. The material gradients across the planar-patterned interface are symmetric in the first, but highly asymmetric in the second layer. We can describe these phenomena by simulations that take into account the surface curvature for the first and a strain-field modulated surface for the second layer.

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PubMed2004

Atomic-scale pathway of the pyramid-to-dome transition during ge growth on Si(001).

By high resolution scanning tunneling microscopy, we investigate the morphological transition from pyramid to dome islands during the growth of Ge on Si(001). We show that pyramids grow from top to bottom and that, from a critical size on, incomplete facets are formed. We demonstrate that the bunching of the steps delimiting these facets evolves into the steeper dome facets. Based on first principles and Tersoff-potential calculations, we develop a microscopic model for the onset of the morphological transition, able to reproduce closely the experimentally observed behavior.

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PubMed2004

Hierarchical self-assembly of GaAs/AlGaAs quantum dots.

A novel structure containing self-assembled, unstrained GaAs quantum dots is obtained by combining solid-source molecular beam epitaxy and atomic-layer precise in situ etching. Photo-luminescence (PL) spectroscopy reveals light emission with very narrow inhomogeneous broadening and clearly resolved excited states at high excitation intensity. The dot morphology is determined by scanning probe microscopy and, combined with single band and eight-band k.p theory calculations, is used to interpret PL and single-dot spectra with no adjustable structural parameter.

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PubMed2003

Morphology response to strain field interferences in stacks of highly ordered quantum dot arrays.

Twofold stacked InGaAs/GaAs quantum dot (QD) layers are grown on GaAs(001) substrates patterned with square arrays of shallow holes. We study the surface morphology of the second InGaAs QD layer as a function of pattern periodicity. Comparing our experimental results with a realistic simulation of the strain energy density E(str) distribution, we find that the second InGaAs QD layer sensitively responds to the lateral strain-field interferences generated by the buried periodic QD array. This response includes the well-known formation of vertically aligned QDs but also the occurrence of QDs on satellite strain energy density minima. Our calculations show that base size and shape as well as lateral orientation of both QD types are predefined by the E(str) distribution on the underlying surface.

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PubMed2003

Probing the lateral composition profile of self-assembled islands.

We apply a selective etching procedure to probe the lateral composition profile of self-assembled SiGe pyramids on a Si(001) substrate surface. We find that the pyramids consist of highly Si intermixed corners, whereas the edges, the apex, and the center of the pyramids remain Ge rich. Our results cannot be explained by existing growth models that minimize strain energy. We use a model that includes surface interdiffusion during island growth, underlining the paramount importance of surface processes during the formation of self-assembled quantum dot heterostructures in many different material systems.

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