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P G Kotula

Publications and source records attributed to P G Kotula.

4 recordsLinked to original sources

Multivariate statistical analysis of concatenated time-of-flight secondary ion mass spectrometry spectral images. Complete description of the sample with one analysis.

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) instruments are capable of saving an entire mass spectrum at each pixel of an image, allowing for retrospective analysis of masses that were not selected for analysis during data collection. These TOF-SIMS spectral images contain a wealth of information, but few tools are available to assist the analyst in visualizing the entire raw data set and as a result, most of the data are not analyzed. Automated, nonbiased, multivariate statistical analysis (MVSA) techniques are useful for converting the massive amount of data into a smaller number of chemical components (spectra and images) that are needed to fully describe the TOF-SIMS measurement. Many samples require two back-to-back TOF-SIMS measurements in order to fully characterize the sample, one measurement of the fraction of positively charged secondary ions (positive ion fraction) and one measurement of the fraction of negatively charged secondary ions (negative ion fraction). Each measurement then needs to be individually evaluated. In this paper, we report the first MVSA analysis of a concatenated TOF-SIMS data set comprising positive ion and negative ion spectral images collected on the same region of a sample. MVSA of concatenated data sets provides results that are intuitive and fully describe the sample. The analytical insight provided by MVSA of the concatenated data set was not obtained when either polarity data set was analyzed separately.

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Using the FIB to characterize nanoparticle materials.

In the 1-100-nm size regime, the properties of materials can differ significantly from those of their bulk counterparts. The present study applies the focused ion beam (FIB) tool to the characterization of nanoscale structures for scanning and transmission electron microscopy. The strength of this method is its ability to manufacture samples that cannot be produced using traditional means. The films of nanoparticles examined here are examples of such systems; the films are found to be not fully dense, composed of chemically heterogeneous areas and mechanically different from the substrate. Distinct advantages of the application of the FIB for characterization of nanoscale structures are highlighted for several nanoparticle structures. This successful application of FIB techniques provides a pathway to integrate the study of nanoscale production techniques and their resulting structure-property relationships.

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Origins of growth stresses in amorphous semiconductor thin films.

Stress evolution during deposition of amorphous Si and Ge thin films is remarkably similar to that observed for polycrystalline films. Amorphous semiconductors were used as model materials to study the origins of deposition stresses in continuous films, where suppression of both strain relaxation and epitaxial strain inheritance provides considerable simplification. Our data show that bulk compression is established by surface stress, while a subsequent return to tensile stress arises from elastic coalescence processes occurring on the kinetically roughened surface.

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