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P Giannozzi

Publications and source records attributed to P Giannozzi.

At least 19 recordsLinked to original sources

First-principle molecular dynamics with ultrasoft pseudopotentials: parallel implementation and application to extended bioinorganic systems.

We present a plane-wave ultrasoft pseudopotential implementation of first-principle molecular dynamics, which is well suited to model large molecular systems containing transition metal centers. We describe an efficient strategy for parallelization that includes special features to deal with the augmented charge in the contest of Vanderbilt's ultrasoft pseudopotentials. We also discuss a simple approach to model molecular systems with a net charge and/or large dipole/quadrupole moments. We present test applications to manganese and iron porphyrins representative of a large class of biologically relevant metalorganic systems. Our results show that accurate density-functional theory calculations on systems with several hundred atoms are feasible with access to moderate computational resources.

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Structure and passivation effects of mono- and dihydrogen complexes in GaAsyN(1-y) alloys.

In GaAsyN(1-y), the presence of a few percent of N induces a large reduction of the GaAs band gap that vanishes upon hydrogenation. In the present Letter, the energetics of N-H complexes and their effects on the band structure of the GaAs0.97N0.03 alloy have been investigated by first-principles density functional methods. We find that monohydrogen N-H+ and dihydrogen N-H* 2 complexes are formed depending on doping. Moreover, only N-H* 2 complexes account for the neutralization of nitrogen effects. A model is proposed that clarifies the passivation mechanism of nitrogen by H.

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Effects of strain and local charge on the formation of deep defects in III-V ternary alloys

The effects of external and internal strains and of defect charges on the formation of gallium vacancies and arsenic antisites in GaAs and In0.5Ga0.5As have been investigated by ab initio density functional methods. Present results show that a proper understanding of strain and defect charge permits the development of a defect engineering of semiconductors. Specifically, they predict that arsenic antisites in InGaAs ternary alloys can form, upon p-type doping in the presence of an arsenic overpressure, even in the case of high-temperature epitaxial growths.

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