Biomedical subjects

P M Voyles

Publications and source records attributed to P M Voyles.

7 recordsLinked to original sources

PubMed2006

Prospects for 3D, nanometer-resolution imaging by confocal STEM.

Confocal STEM is a new electron microscopy imaging mode. In a microscope with spherical aberration-corrected electron optics, it can produce three-dimensional (3D) images by optical sectioning. We have adapted the linear imaging theory of light confocal microscopy to confocal STEM and use it to suggest optimum imaging conditions for a confocal STEM limited by fifth-order spherical aberration. We predict that current or near-future microscopes will be able to produce 3D images with 1 nm vertical resolution and sub-Angstrom lateral resolution. Multislice simulations show that we will need to be cautious in interpreting these images, however, as they can be complicated by dynamical electron scattering.

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PubMed2004

Depth-dependent imaging of individual dopant atoms in silicon.

We have achieved atomic-resolution imaging of single dopant atoms buried inside a crystal, a key goal for microelectronic device characterization, in Sb-doped Si using annular dark-field scanning transmission electron microscopy. In an amorphous material, the dopant signal is largely independent of depth, but in a crystal, channeling of the electron probe causes the image intensity of the atomic columns to vary with the depths of the dopants in each column. We can determine the average dopant concentration in small volumes, and, at low concentrations, the depth in a column of a single dopant. Dopant atoms can also serve as tags for experimental measurements of probe spreading and channeling. Both effects remain crucial even with spherical aberration correction of the probe. Parameters are given for a corrected Bloch-wave model that qualitatively describes the channeling at thicknesses 20 nm, but does not account for probe spreading at larger thicknesses. In thick samples, column-to-column coupling of the probe can make a dopant atom appear in the image in a different atom column than its physical position.

Computer Simulation↗

PubMed2003

Evidence for a new class of defects in highly n-doped Si: donor-pair-vacancy-interstitial complexes.

Electron channeling experiments performed on individually scanned, single columns of atoms show that in highly n-type Si grown at low temperatures the primary electrically deactivating defect cannot belong to either the widely accepted class of donor-vacancy clusters or a recently proposed class of donor pairs. First-principles calculations suggest a new class of defects consisting of two dopant donor atoms near a displaced Si atom, which forms a vacancy-interstitial pair. These complexes are consistent with the present experimental results, the measured open volume of the defects, the observed electrical activity as a function of dopant concentration, and the enhanced diffusion of impurities in the presence of deactivated dopants.

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PubMed2003

Imaging individual atoms inside crystals with ADF-STEM.

The quantitative imaging of individual impurity atoms in annular dark-field scanning transmission electron microscopy (ADF-STEM) requires a clear theoretical understanding of ADF-STEM lattice imaging, nearly ideal thin samples, and careful attention to image processing. We explore the theory using plane-wave multislice simulations that show the image intensity of substitutional impurities is depth-dependent due to probe channeling, but the intensity of interstitial impurities need not be. The images are only directly interpretable in thin samples. For this reason, we describe a wedge mechanical polishing technique to produce samples less than <50 A thick, with low surface roughness and no amorphous surface oxide. This allows us to image individual dopants as they exist within a bulk-like silicon environment. We also discuss the image analysis techniques used to extract maximum quantitative information from the images. Based on this information, we conclude that the primary nanocluster defect responsible for the electrical inactivity of Sb in Si at high concentration consists of only two atoms.

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PubMed2002

Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si.

As silicon-based transistors in integrated circuits grow smaller, the concentration of charge carriers generated by the introduction of impurity dopant atoms must steadily increase. Current technology, however, is rapidly approaching the limit at which introducing additional dopant atoms ceases to generate additional charge carriers because the dopants form electrically inactive clusters. Using annular dark-field scanning transmission electron microscopy, we report the direct, atomic-resolution observation of individual antimony (Sb) dopant atoms in crystalline Si, and identify the Sb clusters responsible for the saturation of charge carriers. The size, structure, and distribution of these clusters are determined with a Sb-atom detection efficiency of almost 100%. Although single heavy atoms on surfaces or supporting films have been visualized previously, our technique permits the imaging of individual dopants and clusters as they exist within actual devices.

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PubMed2002

Fluctuation microscopy in the STEM.

Fluctuation electron microscopy is a technique for studying medium-range order in disordered materials. We present an implementation of fluctuation microscopy using nanodiffraction in a scanning transmission electron microscope (STEM) at a spatial resolution varying from 0.8 to 5.0 nm. Compared to conventional TEM (CTEM), the STEM-based technique offers a denser scattering vector sampling at a reduced sample dose and easier access to variable resolution information. We have reproduced results on amorphous silicon previously obtained by CTEM-based fluctuation microscopy, and report initial variable-resolution measurements on amorphous germanium.

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PubMed2001

Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature.

Using fluctuation electron microscopy, we have observed an increase in the mesoscopic spatial fluctuations in the diffracted intensity from vapor-deposited silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. We interpret this increase as an increase in paracrystalline medium-range order in the sample. A paracrystal consists of topologically crystalline grains in a disordered matrix; in this model the increase in ordering is caused by an increase in the grain size or density. Our observations are counter to the previous belief that the amorphous to polycrystalline transition is a discontinuous disorder-order phase transition.

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