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P Thostrup

Publications and source records attributed to P Thostrup.

5 recordsLinked to original sources

Bonding of gold nanoclusters to oxygen vacancies on rutile TiO2(110).

Through an interplay between scanning tunneling microscopy (STM) and density functional theory (DFT) calculations, we show that bridging oxygen vacancies are the active nucleation sites for Au clusters on the rutile TiO2(110) surface. We find that a direct correlation exists between a decrease in density of vacancies and the amount of Au deposited. From the DFT calculations we find that the oxygen vacancy is indeed the strongest Au binding site. We show both experimentally and theoretically that a single oxygen vacancy can bind 3 Au atoms on average. In view of the presented results, a new growth model for the TiO2(110) system involving vacancy-cluster complex diffusion is presented.

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Oxygen vacancies as active sites for water dissociation on rutile TiO(2)(110).

Through an interplay between scanning tunneling microscopy experiments and density functional theory calculations, we determine unambiguously the active surface site responsible for the dissociation of water molecules adsorbed on rutile TiO(2)(110). Oxygen vacancies in the surface layer are shown to dissociate H(2)O through the transfer of one proton to a nearby oxygen atom, forming two hydroxyl groups for every vacancy. The amount of water dissociation is limited by the density of oxygen vacancies present on the clean surface exclusively. The dissociation process sets in as soon as molecular water is able to diffuse to the active site.

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Adsorption-induced step formation.

Through an interplay between density functional calculations, Monte Carlo simulations and scanning tunneling microscopy experiments, we show that an intermediate coverage of CO on the Pt(110) surface gives rise to a new rough equilibrium structure with more than 50% step atoms. CO is shown to bind so strongly to low-coordinated Pt atoms that it can break Pt-Pt bonds and spontaneously form steps on the surface. It is argued that adsorption-induced step formation may be a general effect, in particular at high gas pressures and temperatures.

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Bridging the pressure gap in surface science at the atomic level: H/Cu(110).

The structural response of the Cu(110) surface to H2 gas pressures ranging from 10(-13) to 1 bar is studied using a novel high-pressure scanning tunneling microscope (HP-STM). We find that at H2 pressures larger than 2 mbar the Cu(110) surface reconstructs into the ( 1x2) "missing-row" structure. From a quantitative analysis of the pressure dependence of the surface reconstruction, we conclude that Cu(110) responds identically to hydrogen at ultrahigh vacuum conditions and at atmospheric pressures. From the HP-STM data, we extract refined values for the adsorption and desorption rate constants.

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