Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures.
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Biomedical subjects
PM Mooney
Publications and source records attributed to PM Mooney.
LeGoues, Mooney, and Tersoff reply.
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Measurement of the activation barrier to nucleation of dislocations in thin films.
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Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures.
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Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs.
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Evidence for large lattice relaxation at the DX center in Si-doped AlxGa
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Electron localization by a metastable donor level in n-GaAs: A new mechanism limiting the free-carrier density.
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Photoionization cross section of the DX center in Si-doped AlxGa1-xAs.
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