Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime.
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Biomedical subjects
PO Holtz
Publications and source records attributed to PO Holtz.
Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells.
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Self-consistent calculations and magnetoluminescence studies of strained InP/InxGa1-xAs heterojunctions.
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Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells.
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Optically detected cyclotron-resonance studies of radiative processes in AlxGa1-xAs/GaAs high-electron-mobility structures.
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Resonant coupling of electrons and excitons in an aperiodic superlattice under electric fields studied by photoluminescence spectroscopy.
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Comment on "Excitonic recombination of degenerate two-dimensional electrons with localized photoexcited holes in a single heterojunction quantum well"
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Influence of interface localization on the binding energy of acceptor bound excitons in narrow GaAs/AlxGa1-xAs quantum wells.
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Exciton dynamics in GaAs/AlxGa1-xAs doped quantum wells.
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Infrared-absorption spectra of acceptors confined in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic field.
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Magnetic-field-induced localization effects on radiative recombination in GaAs/AlxGa1-xAs heterostructures.
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Shake-up intersubband processes in quantum-well luminescence.
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Binding energies and diamagnetic shifts for free excitons in symmetric coupled double quantum wells.
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Magneto-optical studies of acceptors confined in GaAs/AlxGa1-xAs quantum wells.
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Free and acceptor-bound excitons in the transition region between two-dimensional and quasi-three-dimensional GaAs/AlxGa1-xAs systems.
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Theoretical calculations of shallow acceptor states in GaAs/AlxGa1-xAs quantum wells in the presence of an external magnetic field.
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Magnetic properties of the S-like bound hole states in GaAs/AlxGa1-xAs quantum wells.
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Electron and hole effective masses from magnetoluminescence studies of modulation-doped InP/In0.53Ga0.47As heterostructures.
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