Biomedical subjects

Peter B Catrysse

Publications and source records attributed to Peter B Catrysse.

5 recordsLinked to original sources

PubMed2005

Mechanism for designing metallic metamaterials with a high index of refraction.

We introduce a mechanism for creating artificial high refractive index metamaterials by exploiting the existence of subwavelength propagating modes in metallic systems. As an example, we investigate analytically and numerically metal films with a periodic arrangement of cut-through slits. Because of the presence of TEM modes in the slits, for TM polarization such a system can be rigorously mapped into a high refractive index dielectric slab when the features are smaller than the wavelength of light. The effective refractive index is entirely controlled by the geometry of the metal films, is positive, frequency independent, and can be made arbitrarily large.

Journal Article↗

PubMed2004

One-mode model for patterned metal layers inside integrated color pixels.

Optimized design of the optical filters inside integrated color pixels (ICPs) for complementary metal-oxide semiconductor image sensors requires analytical models. ICP optical filters consist of subwavelength patterned metal layers. We show that a one-mode model, in which subwavelength gaps in the metal layer are described in terms of single-mode waveguides, suffices to predict the salient features of measured ICP wavelength selectivity. The Airy-like transmittance formula, derived for transverse-electric polarization, predicts an angle-independent cutoff wavelength, which is in good agreement with predictions made with a two-dimensional finite-difference time-domain method.

Journal Article↗

PubMed2004

Geometries and materials for subwavelength surface plasmon modes.

Plasmonic waveguides can guide light along metal-dielectric interfaces with propagating wave vectors of greater magnitude than are available in free space and hence with propagating wavelengths shorter than those in vacuum. This is a necessary, rather than sufficient, condition for subwavelength confinement of the optical mode. By use of the reflection pole method, the two-dimensional modal solutions for single planar waveguides as well as adjacent waveguide systems are solved. We demonstrate that, to achieve subwavelength pitches, a metal-insulator-metal geometry is required with higher confinement factors and smaller spatial extent than conventional insulator-metal-insulator structures. The resulting trade-off between propagation and confinement for surface plasmons is discussed, and optimization by materials selection is described.

Computer Simulation↗

PubMed2003

Integrated color pixels in 0.18-microm complementary metal oxide semiconductor technology.

Following the trend of increased integration in complementary metal oxide semiconductor (CMOS) image sensors, we have explored the potential of implementing light filters by using patterned metal layers placed on top of each pixel's photodetector. To demonstrate wavelength selectivity, we designed and prototyped integrated color pixels in a standard 0.18-microm CMOS technology. Transmittance of several one-dimensional (1D) and two-dimensional (2D) patterned metal layers was measured under various illumination conditions and found to exhibit wavelength selectivity in the visible range. We performed (a) wave optics simulations to predict the spectral responsivity of an uncovered reference pixel and (b) numerical electromagnetic simulations with a 2D finite-difference time-domain method to predict transmittances through 1D patterned metal layers. We found good agreement in both cases. Finally, we used simulations to predict the transmittance for more elaborate designs.

Journal Article↗

PubMed2002

Optical efficiency of image sensor pixels.

The ability to reproduce a high-quality image depends strongly on the image sensor light sensitivity. This sensitivity depends, in turn, on the materials, the circuitry, and the optical properties of the pixel. We calculate the optical efficiency of a complementary metal oxide semiconductor (CMOS) image sensor pixel by using a geometrical-optics phase-space approach. We compare the theoretical predictions with measurements made by using a CMOS digital pixel sensor, and we find them to be in agreement within 3%. Finally, we show how to use these optical efficiency calculations to trade off image sensor pixel sensitivity and functionality as CMOS process technology scales.

Journal Article↗