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Peter J Delfyett

Publications and source records attributed to Peter J Delfyett.

4 recordsLinked to original sources

Ultralow-jitter and -amplitude-noise semiconductor-based actively mode-locked laser.

We report a semiconductor-based, low-noise, 10.24 GHz actively mode-locked laser with 4.65 fs of relative timing jitter and a 0.0365% amplitude fluctuation (1 Hz to 100 MHz) of the optical pulse train. The keys to obtaining this result were the laser's high optical power and the low phase noise of the rf source used to mode lock the laser. The low phase noise of the rf source not only improves the absolute and relative timing jitter of the laser, but also prevents coupling of the rf source phase noise to the pulse amplitude fluctuations by the mode-locked laser.

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Pulse-amplitude equalization by negative impulse modulation for rational harmonic mode locking.

We propose a novel technique based on negative impulse modulation for pulse repetition rate multiplication by rational harmonic mode locking with pulse-amplitude-equalized pulses directly from the laser cavity. We have generated a pulse train of 15 GHz with more than 16 dB suppression of unwanted amplitude modulation spurs by using a 1 GHz RF signal. This is the highest suppression ratio for a repetition rate multiplication factor of 15 to our knowledge.

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External-cavity, actively mode-locked grating-coupled surface-emitting laser and amplification characteristics of a grating-coupled semiconductor optical amplifier.

An external-cavity, actively mode-locked grating-coupled surface-emitting semiconductor laser (GCSEL) is demonstrated for the first time to the authors' knowledge. The mode-locked oscillator generates a train of optical pulses at a 297-MHz pulse-repetition frequency. The optical pulse from the oscillator has a width of 22.6 ps and a spectral bandwidth of 0.07 nm at 975.9 nm, giving a time-bandwidth product of 0.50. In addition, amplification characteristics of a grating-coupled semiconductor optical amplifier are studied with a continuous-wave external-cavity GCSEL.

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Dispersion-managed semiconductor mode-locked ring laser.

A novel breathing-mode external sigma-ring-cavity semiconductor mode-locked laser is developed. Intracavity pulse compression and stretching produce linearly chirped pulses with an asymmetric exponential temporal profile. External dispersion compensation reduces the pulse duration to 274 fs (within 10% of the bandwidth limit).

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