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Peter J Pauzauskie

Publications and source records attributed to Peter J Pauzauskie.

5 recordsLinked to original sources
PubMed2006

Semiconductor nanowire ring resonator laser.

Nanowires of the wide band-gap semiconductor gallium nitride (GaN) have been shown to act as room-temperature uv lasers. Recent advances in nanomanipulation have made it possible to modify the shape of these structures from a linear to a pseudoring conformation. Changes to the optical boundary conditions of the lasing cavity affect the structure's photoluminescence, photon confinement, and lasing as a function of ring diameter. For a given cavity, ring-mode redshifting is observed to increase with decreasing ring diameter. Significant shifts, up to 10 nm for peak emission values, are observed during optical pumping of a ring resonator nanolaser compared to its linear counterpart. The shifting appears to result from conformational changes of the cavity rather than effects such as band-gap renormalization, allowing the mode spacing and position to be tuned with the same nanowire gain medium.

Journal Article↗
PubMed2006

Optical trapping and integration of semiconductor nanowire assemblies in water.

Semiconductor nanowires have received much attention owing to their potential use as building blocks of miniaturized electrical, nanofluidic and optical devices. Although chemical nanowire synthesis procedures have matured and now yield nanowires with specific compositions and growth directions, the use of these materials in scientific, biomedical and microelectronic applications is greatly restricted owing to a lack of methods to assemble nanowires into complex heterostructures with high spatial and angular precision. Here we show that an infrared single-beam optical trap can be used to individually trap, transfer and assemble high-aspect-ratio semiconductor nanowires into arbitrary structures in a fluid environment. Nanowires with diameters as small as 20 nm and aspect ratios of more than 100 can be trapped and transported in three dimensions, enabling the construction of nanowire architectures that may function as active photonic devices. Moreover, nanowire structures can now be assembled in physiological environments, offering new forms of chemical, mechanical and optical stimulation of living cells.

Journal Article↗
PubMed2005

Polarized Raman confocal microscopy of single gallium nitride nanowires.

Polarized Raman spectra and corresponding Raman scattering intensity images of an isolated gallium nitride nanowire with a diameter of 170 nm are presented. The sensitivity of the confocal microscope combined with a high-resolution piezoelectric stage enables analysis of the crystalline phase and crystallographic orientation of an individual nanowire with an excellent spatial and spectral resolution in a short acquisition time.

Journal Article↗
PubMed2004

Crystallographic alignment of high-density gallium nitride nanowire arrays.

Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

Crystallization↗